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参数资料
| 型号： | AUIRF7309Q |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 30 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 6/13页 |
| 文件大小： | 281K |
| 代理商： | AUIRF7309Q |
AUIRF7309Q
2
www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/s, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
P-Channel ISD
≤ -1.8A, di/dt ≤ 90A/s, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Pulse width ≤ 300s; duty cycle ≤ 2%.
When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
N-Ch
30
–––
V
P-Ch
-30
–––
N-Ch
–––
0.032
–––
V/°C
P-Ch
–––
-0.037
–––
0.050
–––
0.080
–––
0.10
–––
0.16
N-Ch
1.0
–––
3.0
V
P-Ch
-1.0
–––
-3.0
N-Ch
5.2
–––
S
P-Ch
2.5
–––
N-Ch
–––
1.0
P-Ch
–––
-1.0
N-Ch
–––
25
P-Ch
–––
-25
IGSS
Gate-to-Source Forward Leakage
N-P
–––
-100
Gate-to-Source Reverse Leakage
N-P
–––
100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
N-Ch
–––
25
P-Ch
–––
25
N-Ch
–––
2.9
e
P-Ch
–––
2.9
N-Ch
–––
7.9
N-Ch
–––
9.0
P-Ch
–––
6.8
–––
N-Ch
–––
11
–––
P-Ch
–––
21
–––
N-Ch
–––
17
–––
N-Ch
–––
22
–––
P-Ch
–––
25
–––
N-Ch
–––
7.7
–––
P-Ch
–––18–––
LD
Internal Drain Inductance
N-P
–––
4.0
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
N-P
–––
6.0
–––
from package
and center of die contact
N-Ch
–––
520
–––
P-Ch
–––
440
–––
VGS = 0V, VDS = 15V, = 1.0MHz
N-Ch
–––
180
–––
e
P-Ch
–––
200
–––
N-Ch
–––
72
–––
VGS = 0V, VDS = -15V, = 1.0MHz
P-Ch
–––93–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
N-Ch
–––
1.0
V
P-Ch
–––
-1.0
N-Ch
–––
47
71
ns
N-Channel
P-Ch
–––
53
80
TJ = 25°C,IF =2.6A, di/dt = 100A/μs
N-Ch
–––
56
84
nC
P-Channel
e
P-Ch
–––
66
99
TJ = 25°C,IF =-2.2A, di/dt = 100A/μs
ton
Forward Turn-On Time
N-P
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
TJ = 25°C, IS = -1.8A, VGS = 0V e
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
–––
-12
VSD
Diode Forward Voltage
ISM
Pulsed Source Current
(Body
Diode)
c
P-Ch
N-Ch
16
N-Ch
P-Ch
-1.8
–––
IS
Continuous Source Current
(Body Diode)
RD = 4.5
Ω
N-Channel
–––
Crss
Reverse Transfer Capacitance
P-Channel
Ciss
–––
1.8
nA
A
pF
ns
nC
μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
TJ = 25°C, IS = 1.8A, VGS = 0V e
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.4A e
Ω
VGS = -10V, ID = 1.8A e
P-Ch
VGS = 4.5V, ID = 2.0A e
VGS = -4.5V, ID = 1.5A e
Conditions
VDS = 15V, ID = 2.4A
N-Channel
VGS = 20V
VDS = VGS, ID = 250μA
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS = 0V, ID =-250μA
Reference to 25°C, ID = -1mA
N-Ch
VGS(th)
Gate Threshold Voltage
Forward Transconductance
gfs
IDSS
Drain-to-Source Leakage Current
Qg
Total Gate Charge
VDS = VGS, ID = -250μA
VDS = -24V, ID = -1.8A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
P-Channel
td(off)
Turn-Off Delay Time
tf
Fall Time
Input Capacitance
Coss
Output Capacitance
ID = 2.6A, VDS = 16V, VGS = 4.5V
P-Channel
VDD= 10V, ID = 2.6A RG = 6.0
Ω
VDD=-10V, ID =-2.2A RG = 6.0Ω
ID =-2.2A, VDS =-16V, VGS =-4.5V
N-Channel
RD = 3.8
Ω
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