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参数资料
| 型号： | AUIRF7675M2TR |
| 元件分类： | JFETs |
| 英文描述： | 4.4 A, 150 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 |
| 文件页数： | 4/11页 |
| 文件大小： | 292K |
| 代理商： | AUIRF7675M2TR |
AUIRF7675M2TR/TR1
2
www.irf.com
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes
through are on page 10
D
S
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
150
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.16
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
47
56
m
Ω
VGS(th)
Gate Threshold Voltage
3.0
4.0
5.0
V
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
-11
––– mV/°C
gfs
Forward Transconductance
16
–––
S
RG
Gate Resistance
–––
1.2
5.0
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Qg
Total Gate Charge
–––
21
32
Qgs1
Pre-Vth Gate-to-Source Charge
–––
5.2
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.6
–––
nC
Qgd
Gate-to-Drain Charge
–––
7.1
–––
Qgodr
Gate Charge Overdrive
–––
7.1
–––
See Fig. 6 and 17
Qsw
Switch Charge (Qgs2 + Qgd)
–––
8.7
–––
Qoss
Output Charge
–––
8.8
–––
nC
td(on)
Turn-On Delay Time
–––
10
–––
tr
Rise Time
–––
13
–––
td(off)
Turn-Off Delay Time
–––
14
–––
ns
tf
Fall Time
–––
7.5
–––
Ciss
Input Capacitance
–––
1360
–––
Coss
Output Capacitance
–––
190
–––
pF
Crss
Reverse Transfer Capacitance
–––
41
–––
Coss
Output Capacitance
–––
1210
–––
Coss
Output Capacitance
–––
92
–––
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
g
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
63
95
ns
Qrr
Reverse Recovery Charge
–––
180
270
nC
–––
18
–––
72
ID = 11A
VDS = 150V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V
VDS = 75V
TJ = 25°C, IF = 11A, VDD = 25V
di/dt = 100A/μs
i
TJ = 25°C, IS = 11A, VGS = 0V i
showing the
integral reverse
p-n junction diode.
VDS = VGS, ID = 100μA
VDS = 150V, VGS = 0V
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 11A i
VDS = 50V, ID = 11A
VDS = 16V, VGS = 0V
VDD = 75V, VGS = 10Vi
VGS = 0V
= 1.0MHz
ID = 11A
MOSFET symbol
RG=6.8Ω
VDS = 25V
Conditions
VGS = 0V, VDS = 120V, f=1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
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