收藏本站
参数资料
型号： AUIRF7736M2TR1
元件分类： JFETs
英文描述： 22 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
封装： HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5
文件页数： 4/11页
文件大小： 294K
代理商： AUIRF7736M2TR1
AUIRF7736M2TR/TR1
2
www.irf.com
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes
through are on page 11
D
S
G
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.03
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.5
3.0
m
VGS(th)
Gate Threshold Voltage
2.0
3.0
4.0
V
VGS(th)/TJ
Gate Threshold Voltage Coefficient
–––
-9.0
–––
mV/°C
gfs
Forward Transconductance
115
–––
S
RG
Gate Resistance
–––
1.0
–––
IDSS
Drain-to-Source Leakage Current
–––
5
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max. Units
Qg
Total Gate Charge
–––
72
108
Qgs1
Pre-Vth Gate-to-Source Charge
–––
15
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
6.3
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
26
–––
Qgodr
Gate Charge Overdrive
–––
24.7
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
32.3
–––
Qoss
Output Charge
–––
31
–––
nC
td(on)
Turn-On Delay Time
–––
21
–––
tr
Rise Time
–––
43
–––
ns
td(off)
Turn-Off Delay Time
–––
39
–––
tf
Fall Time
–––
27
–––
Ciss
Input Capacitance
–––
4267
–––
Coss
Output Capacitance
–––
943
–––
Crss
Reverse Transfer Capacitance
–––
422
–––
pF
Coss
Output Capacitance
–––
3489
–––
Coss
Output Capacitance
–––
843
–––
Coss eff.
Effective Output Capacitance
–––
1222
–––
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
g
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
35
53
ns
Qrr
Reverse Recovery Charge
–––
38
57
nC
p-n junction diode.
MOSFET symbol
Conditions
VGS = 0V
VDS = 25V
showing the
integral reverse
VDS = 20V
VGS = 20V
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
See Fig.11
Conditions
nA
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 65A i
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = -20V
VDS = 10V, ID = 65A
IF = 65A, VDD = 25V
di/dt = 100A/s
i
IS = 65A, VGS = 0V i
VGS = 10V
VDS = 16V, VGS = 0V
VDD = 20V, VGS = 10Vi
ID = 65A
RG = 6.8
= 1.0MHz
VGS = 0V, VDS = 0V to 32V
VDS = VGS, ID = 150A
ID = 65A
–––
108
432
相关PDF资料
PDF描述
AUIRF7736M2TR 22 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7737L2TR 31 A, 40 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7737L2TR1 31 A, 40 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7738L2TR 35 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7738L2TR1 35 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
AUIRF7737L2TR 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF7737L2TR1 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF7738L2TR 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.6mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF7738L2TR1 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.6mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF7739L2TR 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*