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参数资料
| 型号： | AUIRFB3207 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 282K |
| 代理商： | AUIRFB3207 |
07/21/10
www.irf.com
1
TO-220AB
AUIRFB3207
HEXFET Power MOSFET
S
D
G
AUTOMOTIVE GRADE
S
D
G
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
V(BR)DSS
75V
RDS(on) typ.
3.6m
max.
4.5m
ID (Silicon Limited)
170A
c
ID (Package Limited)
75A
GD
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
mJ
dV/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.50
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
°C/W
RθJA
Junction-to-Ambient, TO-220
–––
62
A
°C
75
300
910
See Fig. 14, 15, 16a, 16b,
Max.
170
120
720
300
5.8
-55 to + 175
± 20
2.0
10lb
xin (1.1Nxm)
PD - 96322
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相关代理商/技术参数 |
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