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参数资料
| 型号： | AUIRFB4410 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 278K |
| 代理商： | AUIRFB4410 |
11/23/2010
www.irf.com
1
PD - 97598
AUTOMOTIVE GRADE
Features
●
Advanced Process Technology
●
Ultra Low On-Resistance
●
Dynamic dV/dT Rating
●
175°C Operating Temperature
●
Fast Switching
●
Repetitive Avalanche Allowed up to
Tjmax
●
Lead-Free, RoHS Compliant
●
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
AUIRFB4410
HEXFET Power MOSFET
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy g
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.61
RθCS
Case-to-Sink, Flat Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
220
See Fig. 14, 15, 16a, 16b
200
19
-55 to + 175
± 20
1.3
10lbxin (1.1Nxm)
300
Max.
88
63
380
75
VDSS
100V
RDS(on) typ.
8.0m
max.
10m
ID (Silicon Limited)
88A
ID (Package Limited)
75A
TO-220AB
AUIRFB4410
S
D
G
GD
S
Gate
Drain
Source
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFB4410Z | 制造商:International Rectifier 功能描述: |
| AUIRFB4610 | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFB8405 | 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET 40V 120A Q101 TO-22 制造商:International Rectifier 功能描述:MOSFET 40V 120A Q101 TO-220AB 制造商:International Rectifier 功能描述:MOSFET, 40V, 120A, Q101, TO-220AB 制造商:International Rectifier 功能描述:MOSFET Auto 40V N-Ch FET 1.9mOhm 120A 制造商:International Rectifier 功能描述:MOSFET, 40V, 120A, Q101, TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0021ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power 制造商:International Rectifier 功能描述:TUBE / Automotive G12.7 MOSFET 40VN 制造商:International Rectifier 功能描述:MOSFET N-Ch 40V 185A Automotive TO220AB |
| AUIRFB8407 | 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET 40V 195A Q101 TO-22 制造商:International Rectifier 功能描述:MOSFET 40V 195A Q101 TO-220AB 制造商:International Rectifier 功能描述:MOSFET, 40V, 195A, Q101, TO-220AB 制造商:International Rectifier 功能描述:TUBE / Automotive G12.7 MOSFET 40VN 制造商:International Rectifier 功能描述:MOSFET, 40V, 195A, Q101, TO-220AB, Transistor Polarity:N Channel, Continuous Dra 制造商:International Rectifier 功能描述:MOSFET, 40V, 195A, Q101, TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:195A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0016ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power 制造商:International Rectifier 功能描述:MOSFET N-Ch 40V 250A Automotive TO220AB |
| AUIRFB8409 | 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET 40V 195A Q101 TO-22 制造商:International Rectifier 功能描述:MOSFET 40V 195A Q101 TO-220AB 制造商:International Rectifier 功能描述:MOSFET, 40V, 195A, Q101, TO-220AB 制造商:International Rectifier 功能描述:MOSFET, 40V, 195A, Q101, TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:195A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.001ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:375W, Operating 制造商:International Rectifier 功能描述:TUBE / Automotive G12.7 MOSFET 40VN |
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