参数资料
型号: AUIRFR024NTR
元件分类: JFETs
英文描述: 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装: ROHS COMPLIANT, PLASTIC, DPAK-3
文件页数: 7/13页
文件大小: 379K
代理商: AUIRFR024NTR
AUIRFR/U024N
www.irf.com
3
Qualification Information
D PAK
MSL1
I-PAK
N/A
RoHS Compliant
Yes
ESD
Machine Model
Class M2(+/-150V )
AEC-Q101-002
Human Body Model
Class H1A(+/-500V )
AEC-Q101-001
Charged Device
Model
Class C5(+/-2000V )
AEC-Q101-005
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101)
Comments:
This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
相关PDF资料
PDF描述
AUIRFR024N 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR024NTRR 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR024NTRL 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFU4615 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
AUIRFR4615TRL 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
相关代理商/技术参数
参数描述
AUIRFR024NTRL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 75mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR024NTRR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 75mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR1010Z 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR1010ZTR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR1010ZTRL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube