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参数资料
| 型号： | AUIRFR024NTRR |
| 元件分类： | JFETs |
| 英文描述： | 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 6/13页 |
| 文件大小： | 379K |
| 代理商： | AUIRFR024NTRR |
AUIRFR/U024N
2
www.irf.com
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.052
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.075
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
4.5
–––
S
IDSS
Drain-to-Source Leakage Current
–––
25
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
20
Qgs
Gate-to-Source Charge
–––
5.3
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
7.6
td(on)
Turn-On Delay Time
–––
4.9
–––
tr
Rise Time
–––34–––
td(off)
Turn-Off Delay Time
–––
19
–––
ns
tf
Fall Time
–––27–––
LD
Internal Drain Inductance
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
from package
and center of die contact
g
Ciss
Input Capacitance
–––
370
–––
Coss
Output Capacitance
–––
140
–––
Crss
Reverse Transfer Capacitance
–––
65
–––
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
56
83
ns
Qrr
Reverse Recovery Charge
–––
120
180
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
pF
–––
17
g
68
–––
4.5
7.5
VGS = 10V,See Fig 6 and 13
fh
VDD = 28V
ID = 10A
RG = 24
,
TJ = 25°C, IS = 10A, VGS = 0V f
TJ = 25°C, IF = 10A
di/dt = 100A/s
fh
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 10A
f
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 10A h
ID = 10A
VDS = 44V
Conditions
RD = 2.6
, See Fig.10fh
VGS = 0V
VDS = 25V
= 1.0MHz, See Fig.5
VGS = 20V
VGS = -20V
S
D
G
S
D
G
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
VDD = 25V, starting TJ = 25°C, L = 1mH, RG = 25, IAS = 10A. (See Figure 12)
ISD ≤ 10A, di/dt ≤ 280A/s, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300s; duty cycle ≤ 2%
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact .
Uses IRFZ24N data and test conditions.
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFR024NTRL | 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFU4615 | 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| AUIRFR4615TRL | 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4615TR | 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4615TRR | 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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