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参数资料
型号： AUIRFR3504TRR
元件分类： JFETs
英文描述： 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数： 5/12页
文件大小： 224K
代理商： AUIRFR3504TRR
AUIRFR3504
2
www.irf.com
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L = 0.52mH, RG = 25Ω, IAS = 30A, VGS =10V.
Part not recommended for use above this
value.
ISD ≤ 30A, di/dt ≤ 170A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 56A.
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
** All AC and DC test conditions based on former package
limited current of 30A.
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.041
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
7.8
9.2
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
40
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
48
71
Qgs
Gate-to-Source Charge
–––
12
18
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
13
20
td(on)
Turn-On Delay Time
–––
11
–––
tr
Rise Time
–––
53
–––
td(off)
Turn-Off Delay Time
–––
36
–––
ns
tf
Fall Time
–––
22
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2150
–––
Coss
Output Capacitance
–––
580
–––
pF
Crss
Reverse Transfer Capacitance
–––
46
–––
Coss
Output Capacitance
–––
2830
–––
Coss
Output Capacitance
–––
510
–––
Coss eff.
Effective Output Capacitance
g
–––
870
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
87
j
(Body Diode)
A
ISM
Pulsed Source Current
–––
350
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
53
80
ns
Qrr
Reverse Recovery Charge
–––
86
130
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
m
Ω
VDS = 25V
Conditions
VDS = VGS, ID = 250μA
VGS = 0V, VDS = 1.0V, = 1.0MHz
VDS = 10V, ID = 30Af**
ID = 30A **
VDS = 32V
VGS = 20V
VGS = -20V
VGS = 10V f
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
MOSFET symbol
VDD = 20V
ID = 30A **
RG = 6.8
Ω
Conditions
VGS = 10V f
VGS = 0V
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 32V, = 1.0MHz
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 30A f**
TJ = 25°C, IF = 30A**, VDD = 20V
di/dt = 100A/μs
f
TJ = 25°C, IS = 30A**, VGS = 0V f
showing the
integral reverse
p-n junction diode.
相关PDF资料
PDF描述
AUIRFR3504TR 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR3504Z 42 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR3504ZTRL 42 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR3504ZTRR 42 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR3504ZTR 42 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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