参数资料
型号: AUIRFR3710ZTRR
元件分类: JFETs
英文描述: 42 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装: ROHS COMPLIANT, D-PAK-3
文件页数: 12/13页
文件大小: 272K
代理商: AUIRFR3710ZTRR
AUIRFR3710Z
8
www.irf.com
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3BVIav) =
DT/ ZthJC
Iav = 2DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
tav
assuming
Tj = 25°C due to
avalanche losses
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
E
A
R
,A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 33A
相关PDF资料
PDF描述
AUIRFR3710ZTRL 42 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR3710Z 42 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR3710ZTR 42 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4104TRL 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFU4104 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
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