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参数资料
| 型号： | AUIRFR4105Z |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 7/14页 |
| 文件大小： | 317K |
| 代理商： | AUIRFR4105Z |
AUIRFR/U4105Z
2
www.irf.com
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage55
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.053
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
19
24.5
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
16
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
18
27
Qgs
Gate-to-Source Charge
–––
5.3
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
7.0
–––
td(on)
Turn-On Delay Time
–––10–––
tr
Rise Time
–––40–––
td(off)
Turn-Off Delay Time
–––26–––
ns
tf
Fall Time
–––24–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
740
–––
Coss
Output Capacitance
–––
140
–––
Crss
Reverse Transfer Capacitance
–––
74
–––
pF
Coss
Output Capacitance
–––
450
–––
Coss
Output Capacitance
–––
110
–––
Coss eff.
Effective Output Capacitance
–––
180
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
30
(Body Diode)
A
ISM
Pulsed Source Current
–––
120
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
19
29
ns
Qrr
Reverse Recovery Charge
–––
14
21
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 44V, = 1.0MHz
VGS = 0V, VDS = 0V to 44V f
VGS = 10V
e
VDD = 28V
ID = 18A
RG = 24.5
TJ = 25°C, IS = 18A, VGS = 0V e
TJ = 25°C, IF = 18A, VDD = 28V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 18A e
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 15V, ID = 18A
ID = 18A
VDS = 44V
Conditions
VGS = 10V e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
相关PDF资料 |
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| AUIRFR4105ZTR | 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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| AUIRFR4105TRR | 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4105TRL | 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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| AUIRFR4105ZTR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR4105ZTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR4105ZTRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| AUIRFR4292TR | 制造商:International Rectifier 功能描述:"AUTOMOTIVE LOGIC LEVEL MOSFET 250V, 9.3A, 375 MOHM, 13 NC Q - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 250V 9.3A DPAK 制造商:International Rectifier 功能描述:Automotive Logic Le mOhm, 13 nC Qg, DPAK |
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