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参数资料
| 型号： | AUIRFR6215TR |
| 元件分类： | JFETs |
| 英文描述： | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 268K |
| 代理商： | AUIRFR6215TR |
AUIRFR6215
HEXFET Power MOSFET
PD-96302
Specifically designed for Automotive applications of
HEXFET Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a
wide variety of other applications.
Description
Features
P-Channel
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
S
D
G
D-Pak
AUIRFR6215
S
D
G
D
AUTOMOTIVE GRADE
V(BR)DSS
-150V
RDS(on) max. 0.295:
ID
-13A
www.irf.com
1
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
04/13/10
GD
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
ch
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
dh
mJ
IAR
Avalanche Current
ch
A
EAR
Repetitive Avalanche Energy
ch
mJ
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
hj
–––
1.4
RθJA
Junction-to-Ambient(PCB mount)
i
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Max.
-13
-9.0
-44
110
5.0
-55 to + 175
± 20
0.71
300
310
A
°C
-6.6
11
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFR6215TRL | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR9024NTRL | 11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFU9024N | 11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| AUIRFR9024NTR | 11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR9024N | 11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFR6215TRL | 功能描述:MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR6215TRR | 功能描述:MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR8401 | 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Rail/Tube 制造商:International Rectifier 功能描述:Auto 40V N-Ch FET 4.3mOhms 100A |
| AUIRFR8401TR | 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Tape and Reel 制造商:International Rectifier 功能描述:Auto 40V N-Ch FET 4.3mOhms 100A |
| AUIRFR8401TRL | 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Tape and Reel 制造商:International Rectifier 功能描述:Auto 40V N-Ch FET 4.3mOhms 100A |
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