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参数资料
| 型号： | AUIRFS3004-7TRR |
| 元件分类： | JFETs |
| 英文描述： | 240 A, 40 V, 0.00125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-7 |
| 文件页数： | 1/11页 |
| 文件大小： | 366K |
| 代理商： | AUIRFS3004-7TRR |
www.irf.com
1
HEXFET Power MOSFET
S
D
G
PD - 97704
AUIRFS3004-7P
VDSS
40V
RDS(on) typ.
0.90m
Ω
max.
1.25m
Ω
ID (Silicon Limited)
400Ac
ID (Package Limited)
240A
07/27/11
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
GD
S
Gate
Drain
Source
D2Pak 7 Pin
G
S
D
S
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications such as
Electric Power Steering, Battery Switch, SMPS and other
heavy loads.
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
●
Automotive Qualified *
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited) e
mJ
IAR
Avalanche Currentd
A
EAR
Repetitive Avalanche Energy d
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case kl
–––
0.40
°C/W
RθJA
Junction-to-Ambient (PCB Mount) j
–––
40
380
2.0
290
See Fig. 14, 15, 22a, 22b
A
°C
300
-55 to + 175
± 20
2.5
Max.
400
280
1610
240
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3004-7TRL | 240 A, 40 V, 0.00125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB |
| AUIRFS3004-7P | 240 A, 40 V, 0.00125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB |
| AUIRFS3004TRL | 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFSL3004 | 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRFS3004 | 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFS3004TRL | 功能描述:MOSFET 40V 340A 1.75 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3004TRR | 功能描述:MOSFET 40V 340A 1.75 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3006 | 功能描述:MOSFET 60V 270A 2.5 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3006-7P | 功能描述:MOSFET 60V 293A 2.1 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3006-7TRL | 功能描述:MOSFET 60V 293A 2.1 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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