- 您现在的位置：买卖IC网 > PDF目录42909 > AUIRFS3207ZTRR 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF资料下载
参数资料
| 型号： | AUIRFS3207ZTRR |
| 元件分类： | JFETs |
| 英文描述： | 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 276K |
| 代理商： | AUIRFS3207ZTRR |
08/16/11
www.irf.com
1
AUIRFS3207Z
AUIRFSL3207Z
HEXFET Power MOSFET
S
D
G
GD
S
Gate
Drain
Source
D2Pak
AUIRFS3207Z
TO-262
AUIRFSL3207Z
VDSS
75V
RDS(on) typ.
3.3m
:
max.
4.1m
:
ID (Silicon Limited)
170A
c
ID (Package Limited)
120A
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Description
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
PD - 96403
S
D
G
D
S
G
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
EAS
Single Pulse Avalanche Energy (Thermally limited)
e
mJ
IAR
Avalanche Currentd
A
EAR
Repetitive Avalanche Energy d
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case k
–––
0.50
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
j
–––
40
°C/W
A
°C
300
170
See Fig. 14, 15, 22a, 22b
300
16
-55 to + 175
± 20
2.0
Max.
170
120
670
120
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3306 | 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3306TRL | 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3306TRR | 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3307Z | 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3307ZTRR | 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFS3306 | 功能描述:MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3306TRL | 功能描述:MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3306TRR | 功能描述:MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3307Z | 功能描述:MOSFET 75V 120A 5.8 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3307ZTRL | 功能描述:MOSFET 75V 120A 5.8 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。