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参数资料
| 型号： | AUIRFZ44NSTRR |
| 元件分类： | JFETs |
| 英文描述： | 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 1/13页 |
| 文件大小： | 273K |
| 代理商： | AUIRFZ44NSTRR |
AUIRFZ44NS
AUIRFZ44NL
HEXFET Power MOSFET
08/29/11
www.irf.com
1
S
D
G
AUTOMOTIVE GRADE
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Features
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
GD
S
Gate
Drain
Source
V(BR)DSS
55V
RDS(on) max. 17.5mΩ
ID
49A
D2Pak
AUIRFZ44NS
TO-262
AUIRFZ44NL
S
D
G
D
S
G
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TA = 25°C
Power Dissipation
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally Limited)
Single Pulse Avalanche Energy
h
EAS (tested)
Single Pulse Avalanche Energy Tested Value
g
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.5
RθJA
Junction-to-Ambient
–––
40
mJ
530
9.4
300 (1.6mm from case )
3.8
25
-55 to + 175
150
W
°C/W
94
Max.
49
35
160
0.63
±20
5.0
PD-96391A
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFZ44NL | 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRFZ44NS | 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFZ44NSTRL | 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFZ44N | 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AUIRFZ44VZSTRR | 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFZ44V | 功能描述:MOSFET 60V, 55A, 16.5mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44VZS | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44VZSTRL | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44VZSTRR | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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