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参数资料
| 型号： | AUIRFZ44Z |
| 元件分类： | JFETs |
| 英文描述： | 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 7/14页 |
| 文件大小： | 327K |
| 代理商： | AUIRFZ44Z |
AUIRFZ44Z/ZS
2
www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L =0.18mH,
RG = 25
, IAS = 31A, VGS =10V. Part not
recommended for use above this value.
ISD ≤ 31A, di/dt ≤ 840A/s, VDD ≤ V(BR)DSS,
TJ
≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population, starting
TJ = 25°C, L =0.18mH, RG = 25, IAS = 31A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is rated at TJ of approximately 90°C.
S
D
G
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
ΒVDSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.054
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
11.1
13.9
m
VGS(th)
Gate Threshold Voltage2.0
–––
4.0
V
gfs
Forward Transconductance
22
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Qg
Total Gate Charge
–––
29
43
nC
Qgs
Gate-to-Source Charge
–––
7.2
11
Qgd
Gate-to-Drain ("Miller") Charge
–––
12
18
td(on)
Turn-On Delay Time
–––
14
–––
ns
tr
Rise Time
–––
68
–––
td(off)
Turn-Off Delay Time
–––
33
–––
tf
Fall Time
–––
41
–––
LD
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
1420
–––
pF
Coss
Output Capacitance
–––
240
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
Coss
Output Capacitance
–––
830
–––
Coss
Output Capacitance
–––
190
–––
Coss eff.
Effective Output Capacitance
–––
300
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
–––
51
(Body Diode)
A
ISM
Pulsed Source Current
–––
200
(Body Diode)
VSD
Diode Forward Voltage
–––
1.2
V
trr
Reverse Recovery Time
–––
23
35
ns
Qrr
Reverse Recovery Charge
–––
17
26
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VDS = 44V
VGS = 10V
f
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 10V
f
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 44V, = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 44V
TJ = 25°C, IF = 31A, VDD = 28V
di/dt = 100A/s
f
TJ = 25°C, IS = 31A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
RG = 15
ID = 31A
VDS = 25V, ID = 31A
VDD = 28V
ID = 31A
VGS = 20V
VGS = -20V
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 31A f
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