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| 型号： | AUIRG7CH80K6B-M |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 1200 V, N-CHANNEL IGBT |
| 封装： | 12 X 12 MM, DIE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 89K |
| 代理商： | AUIRG7CH80K6B-M |
www.irf.com
1
01/12/10
AUIRG7CH80K6B-M
Features
Designed for Automotive Application
**
Solderable Front Metal
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
Short Circuit Rated
Square RBSOA
Positive VCE (on) Temperature Coefficient
Tight Parameter Distribution
Applications
Medium/High Power Inverters
HEV/EV Inverter
E
C
G
n-channel
Note:
* This IR product is 100% tested at wafer level and is manufactured using established, mature and well characterized processes. Due to
restrictions in die level processing, die may not be equivalent to standard package products and are therefore offered with a conditional
performance guarantee. The above data sheet is based on IR sample testing under certain predetermined and assumed conditions,
and are provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed package and use
conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured using IR’s established
processes. Programs for customer-specified testing are available upon request. IR has experienced assembly yields of generally 95%
or greater for individual die; however, customer’s results will vary. Estimates such as those described and set forth in this data sheet for
semiconductor die will vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an
equivalent basis to standard package products and are therefore offered with a limited warranty as described in IR’s applicable standard
terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which are available
upon request. For customers requiring a particular parameter to be guaranteed, special testing can be carried out or product can
bepurchased as known good die.
** Technology qualified in sup-TO247 package according to AEC-Q101.
100% Tested at Probe
*
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies
due to Low VCE (on) and Low Switching Losses
Rugged Transient Performance for Increased
Reliability
Excellent Current Sharing in Parallel Operation
Enables Double side cooling and higher current density
Eliminates wire bonds and Improves Reliability
AUTOMOTIVE GRADE
PD - 96279
Mechanical Parameter
m
Wafer Size
mm
Degrees
Front Metal
Backside Metal
Reject Ink Dot Size
Recommended Storage Environment
mm2
89 pcs
Silicon Nitride
150
0
Thickness
Flat Position
Maximum-Possible Chips per Wafer
Passivation Frontside
Die Size
Emiter Pad Size (Included Gate Pad)
Gate Pad Size
Area Total / Active
12.075x12.075
See Die Drawing
Round, 1mm diameter
144/114
140
Al (4m), Ti (0.1m), Ni (0.2m), Ag (0.6m)
Al (0.1m), Ti (0.1m), Ni (0.4m), Ag (0.6m)
Die Bond
Store in original container, in dry Nitrogen,
0.51mm min (black, center)
Electrically conductive epoxy or solder
<6 months at an ambient temperature of 23°C
Chip Type
VCE
ICn
Die Size
Package
AUIRG7CH80K6B
1200V
200A
12 X 12 mm2
Wafer
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRGB4062D1 | 功能描述:IGBT 晶体管 Automotive 600V Ultra TO-220 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| AUIRGC4062B | 制造商:International Rectifier 功能描述:AUTOMOTIVE 600V 24A TRENCH IGBT DIE - Boxed Product (Development Kits) |
| AUIRGDC0250 | 功能描述:IGBT 晶体管 1200V IGBT 81A Auto 1.37V at 33A Low VCE RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| AUIRGF65A40D0 | 功能描述:DISCRETES 制造商:infineon technologies 系列:* 零件状态:有效 标准包装:25 |
| AUIRGF65G40D0 | 功能描述:IGBT 600V 62A 625W Through Hole TO-247AD 制造商:infineon technologies 系列:CooliRIGBT? 包装:管件 零件状态:有效 IGBT 类型:- 电压 - 集射极击穿（最大值）:600V 电流 - 集电极（Ic）（最大值）:62A 脉冲电流 - 集电极 (Icm):84A 不同?Vge，Ic 时的?Vce（on）:2.2V @ 15V，20A 功率 - 最大值:625W 开关能量:298μJ（开），147μJ（关） 输入类型:标准 栅极电荷:270nC 25°C 时 Td（开/关）值:35ns/142ns 测试条件:400V，20A，4.7欧姆，15V 反向恢复时间（trr）:41ns 封装/外壳:TO-247-3 安装类型:通孔 供应商器件封装:TO-247AD 标准包装:25 |
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