- 您现在的位置：买卖IC网 > PDF目录42910 > AUIRL1404STRL 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF资料下载
参数资料
| 型号： | AUIRL1404STRL |
| 元件分类： | JFETs |
| 英文描述： | 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 9/13页 |
| 文件大小： | 250K |
| 代理商： | AUIRL1404STRL |
AUIRL1404S/L
www.irf.com
5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V
, Drain-to-Source Voltage (V)
C,
Capacitance
(pF)
DS
V
C
=
0V,
C
f = 1MHz
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
100
200
300
400
500
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,Gate-to-Source
Voltage
(V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
95A
V
= 20V
DS
V
= 32V
DS
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
,Source-to-Drain Voltage (V)
I
,Reverse
Drain
Current
(A)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
10
100
1000
10000
1
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
= 175 C
= 25 C
°
J
C
V
, Drain-to-Source Voltage (V)
I
,Drain
Current
(A)
I
,Drain
Current
(A)
DS
D
10us
100us
1ms
10ms
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRL1404STRR | 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRL1404S | 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRL1404L | 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRL1404ZSTRR | 160 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRL1404ZS | 160 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRL1404STRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL1404Z | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL1404ZL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL1404ZS | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL1404ZSTRL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。