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参数资料
| 型号： | AUIRL1404STRR |
| 元件分类： | JFETs |
| 英文描述： | 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 6/13页 |
| 文件大小： | 250K |
| 代理商： | AUIRL1404STRR |
AUIRL1404S/L
2
www.irf.com
S
D
G
S
D
G
Repetitive rating; pulse width limited by max. junction
temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 0.35mH, RG = 25Ω, IAS = 95A.
(See Figure 12)
ISD ≤ 95A, di/dt ≤ 160A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS.
Notes:
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4.
This is applied to D2Pak, When mounted on 1" square PCB
(FR-4 or G-10 Material) . For recommended footprint and
soldering techniques refer to application note #AN-994.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.038
–––
V/°C
–––
4.0
–––
5.9
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
gfs
Forward Transconductance
93
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
140
Qgs
Gate-to-Source Charge
–––
48
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
60
td(on)
Turn-On Delay Time
–––
18
–––
tr
Rise Time
–––
270
–––
td(off)
Turn-Off Delay Time
–––
38
–––
ns
tf
Fall Time
–––
130
–––
LD
Internal Drain Inductance
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
Between lead,
and center of die contact
Ciss
Input Capacitance
–––
6600
–––
Coss
Output Capacitance
–––
1700
–––
Crss
Reverse Transfer Capacitance
–––
350
–––
= 1.0MHz, See Fig.5
Coss
Output Capacitance
–––
6700
–––
Coss
Output Capacitance
–––
1500
–––
Coss eff.
Effective Output Capacitance
g
–––1500–––
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
63
94
ns
Qrr
Reverse Recovery Charge
–––
170
250
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
RDS(on)
Static Drain-to-Source On-Resistance
VGS = 20V
VGS = -20V
m
Ω
VGS = 4.3V, ID = 40A f
integral reverse
p-n junction diode.
VDS = 25V, ID = 95A
ID = 95A
VDS = 32V
Conditions
RD = 0.25
Ωf
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 0V to 32V
TJ = 25°C, IS = 95A, VGS = 0V f
TJ = 25°C, IF = 95A
di/dt = 100A/μs
f
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 95A f
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
VGS = 5.0V,See Fig 6 f
VDD = 20V
ID = 95A
RG = 2.5
Ω,VGS = 4.5V
–––
4.5
7.5
–––
160
h
640
VGS = 0V, VDS = 1.0V, =1.0MHz
VGS = 0V, VDS = 32V, =1.0MHz
pF
–––
MOSFET symbol
showing the
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRL1404S | 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRL1404L | 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRL1404ZSTRR | 160 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRL1404ZS | 160 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRL1404ZL | 160 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相关代理商/技术参数 |
参数描述 |
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| AUIRL1404Z | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL1404ZL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL1404ZS | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL1404ZSTRL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL1404ZSTRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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