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参数资料
| 型号： | AUIRLR024NTRL |
| 厂商： | International Rectifier |
| 文件页数： | 1/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 17A DPAK |
| 标准包装： | 3,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 480pF @ 25V |
| 功率 - 最大： | 45W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
PD- 96348
Features
Advanced Planar Technology
Low On-Resistance
AUTOMOTIVE GRADE
AUIRLR024N
AUIRLU024N
HEXFET ? Power MOSFET
Logic-Level Gate Drive
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
G
D
S
V (BR)DSS
R DS(on) max.
I D
55V
0.065 ?
17A
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET? Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
D
S
D
G
D-Pak
AUIRLR024N
D
S
D
G
I-Pak
AUIRLU024N
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of
other applications.
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (T A ) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
17
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
12
72
45
0.3
± 16
68
11
4.5
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
3.3
R θ JA
R θ JA
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
–––
–––
50
110
°C/W
HEXFET ? is a registered trademark of International Rectifier.
* Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/18/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRLR024NTRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR024Z | 功能描述:MOSFET Automotive FET 55V 7A 58mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR024ZTR | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 55V 7A 58MOHM - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 55V 16A DPAK 制造商:International Rectifier 功能描述:Automotive FET 55V 7A 58mOhm |
| AUIRLR024ZTRL | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 55V 7A 58MOHM - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 55V 16A DPAK 制造商:International Rectifier 功能描述:Automotive FET 55V 7A 58mOhm |
| AUIRLR024ZTRR | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 55V 7A 58MOHM - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 55V 16A DPAK 制造商:International Rectifier 功能描述:Automotive FET 55V 7A 58mOhm |
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