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参数资料
| 型号： | AUIRLR2905TR |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 8/12页 |
| 文件大小： | 269K |
| 代理商： | AUIRLR2905TR |
AUIRLR2905
www.irf.com
5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
400
800
1200
1600
2000
2400
2800
1
10
100
C
,Ca
pa
ci
ta
nc
e(
pF)
DS
V
, Drain-to-Source Voltage (V)
A
V
= 0V,
f = 1MHz
C
= C
+ C
, C
SHORTED
C
= C
C
= C
+ C
GS
iss
gs
gd
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
3
6
9
12
15
0
10203040
506070
Q , Total Gate Charge (nC)
G
V
,G
ate
-to
-S
ou
rc
eV
olta
ge
(V
)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V
= 44V
V
= 28V
I = 25A
DS
D
10
100
1000
0.4
0.8
1.2
1.6
2.0
2.4
T = 25°C
J
V
= 0V
GS
V
, Source-to-Drain Voltage (V)
I
,R
ev
ers
eD
ra
in
C
urre
nt
(A
)
SD
A
T = 175°C
J
1
10
100
1000
1
10
100
V
, Drain-to-Source Voltage (V)
DS
I
,D
ra
in
C
urre
nt
(A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10s
100s
1ms
10ms
A
T
= 25°C
T
= 175°C
Single Pulse
C
J
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRLR2905 | 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR2905TRL | 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR2905ZTR | 42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR2905ZTRR | 42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR2905Z | 42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRLR2905TRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 27mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR2905TRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 27mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR2905Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR2905ZTR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR2905ZTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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