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参数资料
| 型号： | AUIRLR3410TRR |
| 元件分类： | JFETs |
| 英文描述： | 17 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 246K |
| 代理商： | AUIRLR3410TRR |
AUIRLR3410
HEXFET Power MOSFET
04/12/2010
PD - 97491
Features
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Advanced Planar Technology
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Low On-Resistance
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Dynamic dV/dT Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Repetitive Avalanche Allowed up to
Tjmax
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Lead-Free, RoHS Compliant
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Automotive Qualified *
AUTOMOTIVE GRADE
www.irf.com
1
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the
designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of
other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
GD
S
Gate
Drain
Source
D-Pak
AUIRLR3410
G
D
S
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
100V
RDS(on) max.
105m
ID
17A
S
D
G
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
dg
mJ
IAR
Avalanche Current
g
A
EAR
Repetitive Avalanche Energy
g
mJ
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.9
RθJA
Junction-to-Ambient (PCB mount)
i
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Max.
17
12
60
79
0.53
± 16
7.9
150
9.0
5.0
-55 to + 175
300
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRLR3410 | 17 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR3705ZTR | 42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR3705Z | 42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR3705ZTRR | 42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR3705ZTRL | 42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRLR3636 | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR3636 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 60V 50A TO-25 |
| AUIRLR3636TR | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR3636TRL | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR3636TRR | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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