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参数资料
| 型号： | AV850M2-00 |
| 元件分类： | 衰减器 |
| 英文描述： | 10000 MHz - 43500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX |
| 封装： | CHIP |
| 文件页数： | 1/2页 |
| 文件大小： | 79K |
| 代理商： | AV850M2-00 |
Alpha Industries, Inc. [978] 241-7000
Fax [978] 241-7906 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 4/02A
10–43.5 GHz GaAs MMIC
Voltage Variable Attenuator
Features
■ Dual Voltage Control
■ 35 dB Attenuation Range
■ +10 dBm P1 dB All Attenuation States
■ 100% On-Wafer RF and DC Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
■ Ideal for Ka Band SatCom, Point to Point
and Point to Multi-Point Applications
Chip Outline
AV850M2-00
Description
Alpha’s AV850M2-00 MMIC voltage variable attenuator
is a standard TEE configuration incorporating triple-gate
0.25
m power MESFETs. The attenuator has a typical
insertion loss of 3 dB over the 10–40 GHz band. The
attenuation range is 35 dB while typical I/P and O/P return
loss is better than 6 dB. The MMICs employ surface
passivation to ensure a rugged, reliable part with through-
substrate via holes and gold-based backside metallization
to facilitate a conductive epoxy or solder die attach process.
This chip incorporates triple-gate FETs which results in less
attenuation variation over temperature as well as better power
handling performance at all attenuation states. All chips are
screened for insertion loss, full attenuation and I/P and O/P
match over the 10–43.5 GHz band for guaranteed
performance.
Parameter
Condition
Frequency
Symbol
Min.
Typ.2
Max.
Unit
VC1
VC2
(GHz)
Maximum Attenuation
-1
-0.25
10.0–18.0
ISO
15
22
dB
-1
-0.25
18.0–26.0
ISO
20
26
dB
-1
-0.25
26.0–35.0
ISO
25
32
dB
0
-0.80
35.0–43.5
ISO
34
44
dB
Minimum Attenuation
-1
-2.50
10.0–18.0
IL
1.0
2.0
dB
-1
-2.50
18.0–26.0
IL
2.0
2.5
dB
-1
-2.50
26.0–35.0
IL
2.5
3.0
dB
0
-2.50
35.0–43.5
IL
4.0
5.0
dB
Input/Output Return Loss
10.0–43.5
RL
-10
dB
Input Power at 1 dB Compression
10.0–43.5
P1 dB
10
dB
(For All Attenuation Levels)1
Thermal Resistance
θJC
101
°C/W
Electrical Specifications at 25°C
0.000
0.314
0.750
0.097
1.500
0.982
0.911
1.050
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Control Voltage (VC)-7 VDC
Power In (PIN)
30 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
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