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参数资料
| 型号： | AVT-52663-TR1G |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | GREEN, PLASTIC, SC-70, SOT-363, 6 PIN |
| 文件页数： | 6/13页 |
| 文件大小： | 382K |
| 代理商： | AVT-52663-TR1G |
2
Absolute Maximum Rating[1] TA=25°C
Symbol
Parameter
Units
Absolute Max.
Id
Device Current
mA
90
PIN,MAX
CW RF Input Power
dBm
18
PDISS
Total Power Dissipation [3]
mW
394
TOPT
Operating Temperature
°C
-40 to 85
TJ,MAX
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance
Thermal Resistance [2]
TJC = 149°C/W
(Id = 45 mA, TC = 85°C)
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infrared
measurement technique.
3. Ground lead temperature is 25°C. Derate
6.7mW/°C for TC >91°C.
Electrical Specifications [4]
TA = 25°C, Zo = 50
:, VCC = 5 V, Rbias = 22 :, Pin = -15 dBm (unless specified otherwise)
Symbol
Parameter and Test Condition
Frequency
Units
Min.
Typ.
Max.
Id
Device Current
mA
42
45.6
49
Gp
Power Gain
900 MHz
2000 MHz
dB
13.8
16.1
15.5
16.8
'Gp
Gain Flatness
0.05 - 2 GHz
0.67
f3dB
3 dB Bandwidth
GHz
5
OIP3 [5]
Output 3rd Intercept Point
900 MHz
2000 MHz
dBm
26.2
30.2
27.7
S11
Input Return Loss, 50
: source
900 MHz
2000 MHz
dB
-21.9
-15.9
S22
Output Return Loss, 50
: load
900MHz
2000 MHz
dB
-19.1
-15.2
S12
Reverse Isolation
900 MHz
2000 MHz
dB
-19.3
-19.8
P1dB
Output Power at 1dB Gain Compression
900 MHz
2000 MHz
dBm
15.6
15
NF
Noise Figure
900 MHz
2000 MHz
dB
3.6
4
Notes:
4. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).
5. OIP3 test condition: FRF1 - FRF2 = 10MHz with input power of -15 dBm per tone measured at worse side band.
Figure 1. Block diagram of board used for Id, Gain, OIP3, S11, S22, S12, OP1dB and NF measurements.
Circuit losses have been de-embedded from actual measurements.
Pin 1, 2, 4, 5
(GND)
Pin 6
Pin 3
RFin
RFout
VCC
Zo = 50 Ohm
Bias Tee
Rbias
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