参数资料
型号: AWB7221RM41P8
厂商: ANADIGICS INC
元件分类: 放大器
英文描述: 2300 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 7 X 7 MM, 1 MM HEIGHT, ROHS COMPLIANT, MINIATURE, M41, 14 PIN
文件页数: 1/8页
文件大小: 358K
代理商: AWB7221RM41P8
10/2009
AWB7221R
2.30-2.70 GHz Infrastructure
3.2 W Power Amplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.0
M41 Package
14 Pin 7 mm x 7 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
PRODUCT DESCRIPTION
TheAWB7221R is a highly isolated, fully matched, Multi-
Chip-Module (MCM) designed for picocell, femtocell,
and customer premises equipment (CPE) applications
where stringent linearity and high power requirements
FEATURES
InGaP-PlusTM HBT Technology
+35 dBm P1dB
2.5% EVM @ 28 dBm (OFDMA)
30 dB Gain
Integrated Step Attenuator
Integrated output power detector
High Efficiency
Low Transistor Junction Temperature
Balanced and Matched for a 50 System
Highly Isolated
Low Profile Miniature Surface Mount Package:
1 mm
RoHS Compliant Package, 250oC MSL-3
AIR INTERFACES
WiMAX
LTE
APPLICATIONS
Picocell, Femtocell, Home Nodes
Customer Premises Equipment (CPE)
Data Cards and Terminals
RF Input
Vcc 1
RF Output
Vref
Bias
Network
Matching
Network
Matching
Network
Bias
Network
Vcc 2
Step
Attenuator
Step
Attenuator
Attenuator Control
Detector Output
Power
Detector
Power
Detector
AWB7221R
are necessary to meet the extremely demanding needs
of small cell infrastructure architectures. Designed
for WiMAX and LTE air interfaces operating in the
2.30 – 2.70 GHz band, ,the AWB7221R delivers up
to +28 dBm of WiMAX power with exceptionally low
EVM. It operates from a convenient +4.0 V supply and
provides more than 30 dB of gain with a P1dB of +35
dBm. The device is manufactured using an advanced
InGaP HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness. The
self-contained 7mm x 7mm x 1mm surface mount
package incorporates advanced matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
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相关代理商/技术参数
参数描述
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