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参数资料
| 型号： | AWT918 |
| 厂商： | ANADIGICS INC |
| 元件分类： | 放大器 |
| 英文描述： | RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件页数： | 1/15页 |
| 文件大小： | 192K |
| 代理商： | AWT918 |
This Advanced Product Information sheet contains technical information about product ANADIGICS is planning to introduce. The data and
product specifications are subject to change prior to formal introduction. Please note : This device is not to be used for device qualification or
production.
35 Technology Drive, Warren NJ 07059
(908)-668-5000 FAX: (908)-668-5132, mktg@anadigics.com AWT918 05/28/98
1
AWT918
TX POWER MMIC
Advanced Product Information
Rev 0
CELLULAR/PCS Dual Band GaAs Power Amplifier IC
DESCRIPTION:
The AWT918 is a monolithic GaAs
Power Amplifier. It can be used in the
following dual band handset
applications:GSM900/DCS1800,
GSM900/GSM1900 and
AMPS/GSM1900.
FEATURES:
High Output Power
High Efficiency
28 Pin SOIC Plastic Package
Surface Mount Package
Low Cost
RF
OUT
V
D1
V
D2
V
D3
RF
IN
AMPS/GSM
Neg.
Voltage
Generator
BIAS
CONTROL
CIRCUIT
Control
Circuit
v
c
RF
IN PCS/GSM1900
V
DC
V
SS OUT
V
SS
IN
V
REF
V
DB
MAX. RATING
PIN
SIGNAL
MAX.
RATING
PIN
SIGNAL
MAX.
RATING
1VD1
+7.5 VDC
10
RFIN DCS/ PCS
+ 12 dBm
2VC
+ 7.5 VDC
14
VSS
- 7.5 VDC(*)
3VREF
+ 7.5 VDC
16
VD2
+ 7.5 VDC
4VDB
+ 7.5 VDC
18,19,24,25
VD3/RFOUT
+ 7.5 VDC
5RFIN GSM/AMPS
+ 12 dBm
(*) Negative voltage of -3.5 V at least must be present at this pin
Operating Temperature: - 20 to 70
0C
Storage Temperature: - 55 to 100
0C
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