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参数资料
| 型号： | AWU6601RM45P9 |
| 厂商： | ANADIGICS INC |
| 元件分类： | 放大器 |
| 英文描述： | 1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | 4 X 4 MM, 1 MM HEIGHT, ROHS COMPLIANT, MINIATURE, M49 PACKAGE-10 |
| 文件页数： | 10/14页 |
| 文件大小： | 586K |
| 代理商： | AWU6601RM45P9 |
Data Sheet - Rev 2.2
03/2010
AWU6601
5
Table 5: Electrical Specifications - TD-SCDMA Mode
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +2.4 V, 50 system)
PARAMETER
MIN
TYP
MAX
UNIT
COMMENTS
POUT
VMODE1
Gain
24
11.5
27
13.5
-
dB
+27 dBm
+16 dBm
0 V
2.4 V
ACLR1 at 1.6 MHz offset
-
-42
-38
dBc
+27 dBm
+16 dBm
0 V
2.4 V
ACLR2 at 3.2 MHz offset
-
-55
-48
dBc
+27 dBm
+16 dBm
0 V
2.4 V
Power-Added Efficiency
(withoutDC/DCConverter)
33
18
36
20
-
%
+27 dBm
+16 dBm
0 V
2.4 V
QuiescentCurrent(Icq)
Low Bias Mode
-
8
12
mA
VMODE1 = +2.4 V
Mode Control Current
-
0.3
0.6
mA
through VMODE pin, VMODE1 = +2.4 V
Enable Current
-
0.3
0.6
mA
through VENABLE pin, VEN = +2.4 V
BATT Current
-
3.0
5
mA
through VBATT pin, VMODE1 = +2.4 V
Leakage Current
-
<1
5
A
VBATT = +4.3 V, VCC = +4.3 V,
VENABLE = 0 V, VMODE1 = 0 V
Harmonics
2fo
3fo, 4fo
-
-35
dBc
POUT < +27 dBm
Input Impedance
-
2:1
VSWR
Load mismatch stress with no
permanent degradation or failure
8:1
-
VSWR Appliesoverfulloperatingrange
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