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| 型号： | AXUV100G |
| 厂商： | Opto Diode Corp |
| 文件页数： | 1/2页 |
| 文件大小： | 144K |
| 描述： | SENSOR ELECTRON DETECTION |
| 标准包装： | 1 |
| 其它名称： | 958-1002 |
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
FEATURES
" Ideal for electron detection
" Large detection area
" 100% internal QE
ELECTRO-OPTICAL CHARACTERISTICS AT 25癈
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Active Area
Responsivity, R
Shunt Resistance, Rsh
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient
2
Nitrogen or Vacuum
Maximum Junction Temperature
Lead Soldering Temperature
1
-10?TO 40癈
2
-20癈 TO 80癈
70癈
260癈
1
0.08" from case for 10 seconds.
2
Temperatures exceeding these parameters may create Oxide growth on the active area.
Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised.
Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode Handling Precautions for IRD Detectors
prior to removing cover.
Dimensions are in inch [metric] units.
10mm x 10mm
@ 254nm, V
R
= 0V
V
B
= ?0mV
I
R
= 1礎
V
R
= 0V
V
R
= 0V, R
L
= 50?/DIV>
0.07
20
100
0.08
10
10
0.09
44
10
mm
2
A/W
M-ohm
Volts
nF
usec
ELECTRON DETECTION 100 mm
2
AXUV100G
Revision February 26, 2013
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