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参数资料
型号： AZP92
厂商： Electronic Theatre Controls, Inc.
英文描述： ECL/PECL ±1, ±2 Clock Generation Chip with Selectable Enable
中文描述： ECL / PECL的± 1，± 2代芯片的时钟可选启用
文件页数： 4/7页
文件大小： 127K
代理商： AZP92
AZP92
January 2006 REV - 1
www.azmicrotek.com
4
Absolute Maximum Ratings are those values beyond which device life may be impaired.
Symbol
Characteristic
V
CC
PECL Power Supply
V
I
PECL Input Voltage
V
EE
ECL Power Supply
V
I
ECL Input Voltage
Output Current
T
A
Operating Temperature Range
T
STG
Storage Temperature Range
100K ECL DC Characteristics
(V
EE
= -3.0V to -5.5V, V
CC
= GND)
-40
°
C
Symbol
Characteristic
Min
V
OH
Output HIGH Voltage
1
-1085
V
OL
Output LOW Voltage
1
-1900
Input HIGH Voltage
D/D, EN (ECL)
2
EN (CMOS)
3
V
EE
+2000
Input LOW Voltage
D/D, EN (ECL)
2
EN (CMOS)
3
V
EE
V
EE
+ 800
V
BB
Reference Voltage
-1390
I
IH
Input HIGH Current EN
Input LOW Current
EN (ECL)
2
EN (CMOS)
3
-150
I
EE
Power Supply Current
4
1.
Specified with outputs
terminated through 50
Ω
resistors to V
CC
- 2V.
2.
EN-SEL connected to V
EE
through a 20k
Ω
resistor.
3.
EN-SEL connected V
or left open (NC).
4.
DIV-SEL left open (NC).
100K LVPECL DC Characteristics
(V
EE
= GND, V
CC
= +3.3V)
-40
°
C
Symbol
Characteristic
Min
V
OH
Output HIGH Voltage
1,2
2215
V
OL
Output LOW Voltage
1,2
1400
Input HIGH Voltage
1
D/D, EN (PECL)
3
EN (CMOS)
4
2000
Input LOW Voltage
1
D/D, EN (PECL)
3
EN (CMOS)
4
GND
V
BB
Reference Voltage
1
1910
I
IH
Input HIGH Current EN
Input LOW Current
EN (PECL)
3
EN (CMOS)
4
-150
I
EE
Power Supply Current
5
1.
For supply voltages other that 3.3V, use the ECL table values and ADD supply voltage value.
2.
Specified with outputs
terminated through 50
Ω
resistors to V
CC
- 2V.
3.
EN-SEL connected to V
through a 20k
Ω
resistor.
4.
EN-SEL connected V
EE
or left open (NC).
5.
DIV-SEL left open (NC).
Rating
0 to +6.0
0 to +6.0
-6.0 to 0
-6.0 to 0
50
100
-40 to +85
-65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
(V
EE
= 0V)
(V
EE
= 0V)
(V
CC
= 0V)
(V
CC
= 0V)
— Continuous
— Surge
I
HGOUT
mA
°
C
°
C
0
°
C
25
°
C
85
°
C
Max
-880
-1555
-390
V
CC
-1475
Min
-1025
-1900
-1165
V
EE
+2000
-2250
V
EE
-1390
0.5
-150
Max
-880
-1620
-390
V
CC
-1475
V
EE
+ 800
-1250
150
Min
-1025
-1900
-1165
V
EE
+2000
-2250
V
EE
-1390
0.5
-150
Max
-880
-1620
-390
V
CC
-1475
V
EE
+ 800
-1250
150
Min
-1025
-1900
-1165
V
EE
+2000
-2250
V
EE
-1390
0.5
-150
Max
-880
-1620
-390
V
CC
-1475
V
EE
+ 800
-1250
150
Unit
mV
mV
V
IH
-1165
mV
V
IL
-2250
mV
-1250
150
mV
μ
A
I
IL
0.5
μ
A
31
31
31
34
mA
0
°
C
25
°
C
85
°
C
Max
2420
1745
2910
V
CC
1825
800
2050
150
Min
2275
1400
2135
2000
1050
GND
1910
0.5
-150
Max
2420
1680
2910
V
CC
1825
800
2050
150
Min
2275
1400
2135
2000
1050
GND
1910
0.5
-150
Max
2420
1680
2910
V
CC
1825
800
2050
150
Min
2275
1400
2135
2000
1050
GND
1910
0.5
-150
Max
2420
1680
2910
V
CC
1825
800
2050
150
Unit
mV
mV
V
IH
2135
mV
V
IL
1050
mV
mV
μ
A
I
IL
0.5
μ
A
31
31
31
34
mA
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