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参数资料
| 型号： | B772 |
| 厂商： | AUK Corp |
| 英文描述： | PNP Silicon Transistor |
| 中文描述： | 进步党硅晶体管 |
| 文件页数： | 2/3页 |
| 文件大小： | 123K |
| 代理商： | B772 |
KST-B015-001
2
STB772
Absolute maximum ratings
(Ta=25
°°°°C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-15
V
Collector-Emitter voltage
VCEO
-12
V
Emitter-Base voltage
VEBO
-5
V
Collector current
IC
-5
A
Collector dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics
(Ta=25
°°°°C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C=-50A, IE=0
-15
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C=-1mA, IB=0
-12
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E=-50A, IC=0
-5
-
V
Collector cut-off current
I
CBO
V
CB=-12V, IE=0
-
-1
A
Emitter cut-off current
I
EBO
V
EB=-5V, IC=0
-
-1
A
h
FE1
V
CE=-2V, IC=-500mA
160
-
320
-
DC current gain
h
FE2
V
CE=-2V, IC=-3A
40
-
Collector-Emitter on voltage
V
CE(sat1)
I
C=-3A, IB=-150mA
-
-0.5
V
Base-Emitter on voltage
V
BE(sat)
I
C=-3A, IB=-150mA
-
-1.2
V
Transition frequency
f
T
V
CB=-5V, IC=-500mA
-
150
-
MHz
Collector output capacitance
C
ob
V
CB=-10V, IE=0, f=1MHz
-
50
pF
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