参数资料
型号: BA3474F-E2
厂商: Rohm Semiconductor
文件页数: 18/32页
文件大小: 0K
描述: IC OPAMP 610MW 14SOIC
标准包装: 2,500
放大器类型: 通用
电路数: 4
转换速率: 10 V/µs
增益带宽积: 4MHz
电流 - 输入偏压: 100nA
电压 - 输入偏移: 1500µV
电流 - 电源: 8mA
电流 - 输出 / 通道: 30mA
电压 - 电源,单路/双路(±): 3 V ~ 36 V,±1.5 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.173",4.40mm 宽)
供应商设备封装: 14-SOP
包装: 带卷 (TR)
Datasheet
www.rohm.com
TSZ02201-0RAR0G200100-1-2
2012 ROHM Co., Ltd. All rights reserved.
25/29
26.OCT.2012 Rev.002
TSZ2211115001
BA3472xxx, BA3472RFVM, BA3474xxx, BA3474RFV
●Operational Notes
1) Unused circuits
When there are unused circuits it is recommended that they are connected
as in Figure 54, setting the non-inverting input terminal to a potential within
input common-mode voltage range (Vicm).
2) Input terminal voltage
Applying GND + 36V to the input terminal is possible without causing
deterioration of the electrical characteristics or destruction, irrespective of
the supply voltage. However, this does not ensure normal circuit operation.
Please note that the circuit operates normally only when the input voltage is
within the common mode input voltage range of the electric characteristics.
3) Power supply (single / dual)
The op-amp operates when the specified voltage supplied is between VCC
and VEE. Therefore, the single supply op-amp can be used as dual supply
op-amp as well.
4) Power dissipation Pd
Using the unit in excess of the rated power dissipation may cause deterioration in electrical characteristics due to a rise in
chip temperature, including reduced current capability. Therefore, please take into consideration the power dissipation
(Pd) under actual operating conditions and apply a sufficient margin in thermal design. Refer to the thermal derating
curves for more information.
5) Short-circuit between pins and erroneous mounting
Incorrect mounting may damage the IC. In addition, the presence of foreign particles between the outputs, the output and
the power supply, or the output and GND may result in IC destruction.
6) Operation in a strong electromagnetic field
Operation in a strong electromagnetic field may cause malfunctions.
7) Radiation
This IC is not designed to withstand radiation.
8) IC handling
Applying mechanical stress to the IC by deflecting or bending the board may cause fluctuations in the electrical
characteristics due to piezo resistance effects.
9) Board inspection
Connecting a capacitor to a pin with low impedance may stress the IC. Therefore, discharging the capacitor after every
process is recommended. In addition, when attaching and detaching the jig during the inspection phase, ensure that the
power is turned OFF before inspection and removal. Furthermore, please take measures against ESD in the assembly
process as well as during transportation and storage.
10) Output capacitor
Discharge of the external output capacitor to VCC is possible via internal parasitic elements when VCC is shorted to VEE,
causing damage to the internal circuitry due to thermal stress. Therefore, when using this IC in circuits where oscillation
due to output capacitive load does not occur, such as in voltage comparators, use an output capacitor with a capacitance
less than 0.1F.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
Figure 54. Unused circuit example
VCC
VEE
+
-
Please keep this
potential in Vicm
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