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参数资料
| 型号： | BA484 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Band-switching diodes |
| 中文描述： | SILICON, VHF BAND, MIXER DIODE, DO-34 |
| 封装： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件页数： | 3/5页 |
| 文件大小： | 33K |
| 代理商： | BA484 |
1996 Apr 17
3
Philips Semiconductors
Product specification
Band-switching diodes
BA482; BA483; BA484
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a FR4 printed-circuit board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length 10 mm
lead length 10 mm; note 1
300
500
K/W
K/W
GRAPHICAL DATA
(1) T
j
= 75
°
C; typical values.
(2) T
j
= 25
°
C; typical values.
(3) T
j
= 25
°
C; maximum values.
Fig.2
Forward current as a function of
forward voltage.
handbook, halfpage
0
1.5
0
50
MBG304
0.5
1
IF
(mA)
VF
(1)
(2)
(3)
V
R
= 20 V.
Solid line: maximum values.
Dotted line: typical values.
Fig.3
Reverse current as a function of
junction temperature.
handbook, halfpage
(nA)
5
10
4
10
3
10
2
10
1
150
0
MBG303
50
100
Tj ( o
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