参数资料
| 型号： | BA6951FS-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 9/13页 |
| 文件大小： | 0K |
| 描述： | IC DVR REVERSE MOTOR 16SSOP |
| 标准包装： | 2,500 |
| 应用： | 直流电机驱动器 |
| 输出数： | 1 |
| 电流 - 输出： | 800mA |
| 电压 - 负载： | 3 V ~ 16 V |
| 电源电压： | 3 V ~ 6 V |
| 工作温度： | -20°C ~ 75°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 16-SSOPA |
| 包装： | 带卷 (TR) |
BA6950FS, BA6951FS
Technical Note
13)
Regarding the input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by
which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin.
Resistor
Transistor (NPN)
Pin A
Pin B
C
B
Pin B
Pin A
E
B
C
P +
P +
N
P +
P
P
P substrate
N
N
Parasitic element
P N
P substrate
GND
N
Parasitic
element
GND GND
Parasitic element
Appendix: Example of monolithic IC structure
+
N
E
Parasitic
GND element
Other adjacent elements
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
9/10
2011.05 - Rev.C
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