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| 型号： | BAS116TT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 83K |
| 描述： | DIODE SWITCH 200MA 75V SC75-3 |
| 标准包装： | 3,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 75V |
| 电流 - 平均整流 (Io)： | 200mA |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 150mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 3µs |
| 电流 - 在 Vr 时反向漏电： | 5nA @ 75V |
| 电容@ Vr, F： | 2pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-75，SOT-416 |
| 供应商设备封装： | SC-75，SOT-416 |
| 包装： | 带卷 (TR) |
?
Semiconductor Components Industries, LLC, 2011
September, 2011 ?
Rev. 1
1
Publication Order Number:
BAS116TT1/D
BAS116TT1G
Switching Diode
Features
?
Low Leakage Current Applications
?
Medium Speed Switching Times
?
Available in 8 mm Tape and Reel
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA
= 25
°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
VR
75
V
Peak Forward Current
IF
200
mA
Peak Forward Surge Current
IFM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR?4 Board (Note 1)
TA
= 25
°C
Derated above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient (Note 1)
RJA
555
°C/W
Total Device Dissipation,
FR?4 Board (Note 2)
TA
= 25
°C
Derated above 25°C
PD
360
2.9
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient (Note 2)
RJA
345
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
?55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?4 @ Minimum Pad
2. FR?4 @ 1.0 ×
1.0 Inch Pad
http://onsemi.com
Device Package Shipping?
ORDERING INFORMATION
CASE 463
SOT?416
STYLE 2
MARKING
DIAGRAM
3
CATHODE
1
ANODE
BAS116TT1G SOT?416
(Pb?Free)
3000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
3
AE M
1
AE = Specific Device Code
M = Date Code
= Pb?Free Package
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BAS116TW | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES |
| BAS116TW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BAS116TW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BAS116UDJ | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL SURFACE MOUNT SWITCHING DIODE |
| BAS116UDJ-7 | 功能描述:二极管 - 通用，功率，开关 Dual SM Switching 85V 60V 215mA 250mW RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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