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| 型号： | BAS20HT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 121K |
| 描述： | DIODE SWITCH 200V 200MA SOD-323 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 产品目录绘图： | Rectifer SOD-323 |
| 标准包装： | 1 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 200V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 200mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 50ns |
| 电流 - 在 Vr 时反向漏电： | 1µA @ 200V |
| 电容@ Vr, F： | 5pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 标准包装 |
| 产品目录页面： | 1569 (CN2011-ZH PDF) |
| 其它名称： | BAS20HT1GOSDKR |
                 ? Semiconductor Components Industries, LLC, 2011 October, 2011 ? Rev. 6 1 Publication Order Number: BAS20HT1/D BAS20HT1, SBAS20HT1G High Voltage Switching Diode Features ? AEC?Q101 Qualified and PPAP Capable ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 200 Vdc Repetitive Peak Reverse Voltage VRRM 200 Vdc Continuous Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 625 mAdc Repetitive Peak Forward Current IFRM 500 mA Non?Repetitive Peak Forward Current (Square Wave, TJ = 25 °C prior to surge) t = 1 s t = 1 ms t = 1 s IFSM 5.0 2.0 0.5 A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board* TA = 25 °C Derate above 25°C PD 200 1.57 mW mW/°C Thermal Resistance Junction?to?Ambient RJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg ?55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *FR?5 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, T J = 150 °C) IR ? ? 1.0 100 Adc Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) 250 ? Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF ? ? 1000 1250 mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD ? 5.0 pF Reverse Recovery Time (IF = I R = 30 mAdc, R L = 100 ) trr ? 50 ns http://onsemi.com HIGH VOLTAGE SWITCHING DIODE Device Package Shipping? ORDERING INFORMATION SOD?323 CASE 477 STYLE 1 1 CATHODE 2 ANODE MARKING DIAGRAM JR = Specific Device Code M = Date Code* = Pb?Free Package 1 2 ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. JR M BAS20HT1G SOD?323 (Pb?Free) 3000 / Tape & Reel (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. SBAS20HT1G SOD?323 (Pb?Free) 3000 / Tape & Reel |
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相关代理商/技术参数 |
参数描述 |
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| BAS20L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Voltage Switching Diode |
| BAS20LT1 | 功能描述:二极管 - 通用，功率，开关 200V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAS20LT1G | 功能描述:二极管 - 通用，功率，开关 200V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAS20LT1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode 制造商:ON Semiconductor 功能描述:SWITCH DIODE, 200V, 200mA, SOT-23 |
| BAS20LT3G | 功能描述:二极管 - 通用，功率，开关 200V SOT23 RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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