参数资料
型号: BAS40-04LT1G
厂商: ON Semiconductor
文件页数: 1/3页
文件大小: 127K
描述: DIODE SCHOTTKY DUAL 40V SOT23
产品变化通告: Wire Change 08/Jun/2009
产品目录绘图: Rectifier SOT-23, SOT-23S
标准包装: 10
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 40mA
电流 - 在 Vr 时反向漏电: 1µA @ 25V
电流 - 平均整流 (Io)(每个二极管): 120mA(DC)
电压 - (Vr)(最大): 40V
二极管类型: 肖特基
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 1 对串联
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 标准包装
产品目录页面: 1567 (CN2011-ZH PDF)
其它名称: BAS40-04LT1GOSDKR
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 11
1
Publication Order Number:
BAS40?04LT1/D
BAS40-04LT1G,
SBAS40-04LT1G
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
?
Extremely Fast Switching Speed
?
Low Forward Voltage
?
AEC Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
40
V
Forward Power Dissipation
@ TA
= 25
?C
Derate above 25?C
PF
225
1.8
mW
mW/?C
Operating Junction and Storage
Temperature Range
TJ,
Tstg
?55 to +150
?C
Forward Continuous Current
IFM
120
mA
Single Forward Current
t
1 s
t
10 ms
IFSM
200
600
mA
Thermal Resistance (Note 1)
Junction?to?Ambient (Note 2)
RJA
508
311
?C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?4 @ minimum pad.
2. FR?4 @ 1.0 x 1.0 in pad.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Device Package Shipping?
ORDERING INFORMATION
SOT?23 (TO?236)
CASE 318
STYLE 11
40 VOLTS
SCHOTTKY BARRIER DIODES
MARKING DIAGRAM
CB = Specific Device Code
M = Date Code*
= Pb?Free Package
ANODE
1
CATHODE
2
3
CATHODE/ANODE
BAS40?04LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
CB M
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SBAS40?04LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
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