参数资料
型号: BAS40-06LT1
厂商: ON Semiconductor
文件页数: 1/3页
文件大小: 121K
描述: DIODE SCHOTTKY 40V CA SOT23
产品变化通告: Product Discontinuation 27/Jun/2007
标准包装: 10
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 40mA
电流 - 在 Vr 时反向漏电: 1µA @ 25V
电流 - 平均整流 (Io)(每个二极管): 120mA(DC)
电压 - (Vr)(最大): 40V
二极管类型: 肖特基
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 1 对共阳极
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 剪切带 (CT)
其它名称: BAS40-06LT1OSCT
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 8
1
Publication Order Number:
BAS40?06LT1/D
BAS40-06LT1G,
SBAS40-06LT1G
Common Anode Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand held and portable
applications where space is limited.
Features
?
Extremely Fast Switching Speed
?
Low Forward Voltage
?
AEC Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
40
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Forward Power Dissipation
@ TA
= 25
?C
Derate above 25?C
PF
225
1.8
mW
mW/?C
Operating Junction and Storage
Temperature Range
TJ, Tstg
?55 to +150
?C
Forward Continuous Current
IFM
120
mA
Single Forward Current
t
1 s
t
10 ms
IFSM
200
600
mA
Thermal Resistance (Note 1)
Junction?to?Ambient (Note 2)
RJA
508
311
?C/W
1. FR?4 @ minimum pad.
2. FR?4 @ 1.0 x 1.0 in pad.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
40 VOLTS
SCHOTTKY BARRIER DIODE
Device Package Shipping?
ORDERING INFORMATION
ANODE
3
CATHODE
1
2
CATHODE
http://onsemi.com
SOT?23 (TO?236)
CASE 318
STYLE 12
MARKING DIAGRAM
L2 M
L2 = Specific Device Code
M = Date Code*
= Pb?Free Package
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAS40?06LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SBAS40?06LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
相关PDF资料
PDF描述
396-062-526-802 CARD EDGE 62POS DL .125X.250 BLK
396-062-526-204 CARD EDGE 62POS DL .125X.250 BLK
396-062-526-202 CARD EDGE 62POS DL .125X.250 BLK
396-062-526-201 CARD EDGE 62POS DL .125X.250 BLK
T95Y476K6R3HSAL CAP TANT 47UF 6.3V 10% 2910
相关代理商/技术参数
参数描述
BAS40-06LT1/D 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Common Anode Schottky Barrier Diode
BAS40-06LT1G 功能描述:肖特基二极管与整流器 40V 225mW Dual Common Anode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
BAS40-06T 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-06-T 功能描述:肖特基二极管与整流器 200mA 40V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
BAS40-06T/R 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY TAPE-7