参数资料
型号: BAS678
厂商: NXP SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: High-speed diode
中文描述: 0.3 A, 100 V, SILICON, SIGNAL DIODE
文件页数: 2/7页
文件大小: 43K
代理商: BAS678
1996 Sep 10
2
Philips Semiconductors
Product specification
High-speed diode
BAS678
FEATURES
Small plastic SMD package
High switching speed: max. 6 ns
Continuous reverse voltage:
max. 80 V
Repetitive peak reverse voltage:
max. 100 V
Repetitive peak forward current:
max. 600 mA.
APPLICATIONS
High-speed switching in hybrid
thick and thin-film circuits.
DESCRIPTION
The BAS678 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small rectangular plastic SMD SOT23
package.
PINNING
PIN
DESCRIPTION
1
2
3
anode
not connected
cathode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code:
L52.
handbook, halfpage
1
3
MAM185
2
n.c.
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
100
80
250
600
V
V
mA
mA
see Fig.2; note 1
square wave; T
j
= 25
°
C prior to
surge; see Fig.4
t = 1
μ
s
t = 100
μ
s
t = 10 ms
T
amb
= 25
°
C; note 1
9
3
1.7
A
A
A
mW
°
C
°
C
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
250
+150
150
65
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