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参数资料
| 型号： | BAS70SV |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 121K |
| 描述： | DIODE SCHOTTKY 70V 70MA SOT563-6 |
| 标准包装： | 1 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 15mA |
| 电流 - 在 Vr 时反向漏电： | 2.5µA @ 70V |
| 电流 - 平均整流 (Io)（每个二极管）： | 70mA |
| 电压 - (Vr)（最大）： | 70V |
| 反向恢复时间(trr)： | 8ns |
| 二极管类型： | 肖特基 |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 二极管配置： | 2 个独立式 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 其它名称： | BAS70SVFSDKR |
BAS70SV — 70 V Dual-S
chottky Barrier Diodes
? 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BAS70SV Rev. 1.1.0 1
June 2013
BAS70SV
70 V Dual-Schottky Barrier Diodes
Features
? Low Forward-Voltage Drop
? Low Capacitance
? Low Leakage Current
? Fast Switching
? Ultra-Small Surface-Mount Package
? Lead Free by Design / RoHS Compliant
? Green Compound
? 0.6mm Maximum Package Height
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA
= 25°C unless otherwise noted.
Thermal Characteristics
Note:
1. Device mounted on board compliant to JESD51-2 and JESD51-3 standards.
Part Number Marking Package Packing Method
BAS70SV AD SOT-563F 6L Tape and Reel
Symbol Parameter
Value Units
VRRM
Maximum Repetitive Reverse Voltage 70 V
IF(AV)
Average Rectified Forward Current 70 mA
IFSM
Forward Surge Current (8.3mS Single Half Sine Wave) 2.5 A
TJ, TSTG
Operating Junction and Storage Temperature Range -55 to +150
°C
Symbol Parameter Value Units
PD
Power Dissipation 200 mW
RθJA
Thermal Resistance, Junction to Ambient(1)
625
°C/W
ELECTRICAL SYMBOL
(Pin1)
SOT-563F
BAS70SV Marking : AD
C1
C2
A1
A2
Note:
Pinouts are symmetrical. Pin 1 & 4 are interchangeable.
The placement of the device in the carrier tape can be of either orientation.
相关PDF资料 |
PDF描述 |
|---|---|
| BAS70W-04-7-F | DIODE SCHOTTKY 70V 200MW SC70-3 |
| BAT18,215 | DIODE 35V 100MA SOT-23 |
| BAT40V-7 | DIODE SCHOTTKY 150MW 40V SOT-563 |
| BAT40VC-7 | DIODE SCHOTTKY 150MW 40V SOT-563 |
| BAT54ALT1G | DIODE SCHOTTKY DET/SW 30V SOT23 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BAS70SV_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:70V Dual Schottky Barrier Diodes |
| BAS70SW | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| BAS70SW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BAS70SW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BAS70SW-T1 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
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