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| 型号： | BAT18,215 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 2/7页 |
| 文件大小： | 44K |
| 描述： | DIODE 35V 100MA SOT-23 |
| 产品目录绘图： | SOT-23 Circuit |
| 标准包装： | 3,000 |
| 二极管类型： | 标准 - 单 |
| 电压 - 峰值反向(最大)： | 35V |
| 电流 - 最大： | 100mA |
| 电容@ Vr, F： | 1pF @ 20V，1MHz |
| 电阻@ Vr, F： | 700 毫欧 @ 5mA，200MHz |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
9397 750 13385
? Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 31 August 2004 2 of 7
Philips Semiconductors
BAT18
Silicon planar diode
4. Marking
[1] * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
5. Limiting values
6. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board.
7. Characteristics
Table 3: Marking
Type number
Marking code[1]
BAT18 10*
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
continuous reverse voltage - 35 V
IF
continuous forward current - 100 mA
Tstg
storage temperature
?55 +125
°C
Tj
junction temperature - 125
°C
Table 5: Thermal characteristics
Tj
= 25
°C unless otherwise speci?ed.
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-tp)
thermal resistance from junction to tie-point 330 K/W
Rth(j-a)
thermal resistance from junction to ambient
[1]
500 K/W
Table 6: Electrical characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage IF
= 100 mA; see
Figure
1
- - 1.2 V
IR
reverse current see
Figure
2
VR
= 20 V - - 100 nA
VR
= 20 V; Tj
=60°C --1μA
Cd
diode capacitance VR= 20 V; f = 1 MHz; seeFigure3
- 0.8 1.0 pF
rD
diode forwardIF= 5 mA; f = 200 MHz; seeFigure4
- 0.5 0.7Ω
resistance
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