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| 型号： | BAT54-7-F |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 87K |
| 描述： | DIODE SCHOTTKY 30V 200MW SOT23-3 |
| 产品变化通告： | Encapsulate Change 15/May/2008 Wire Change 16/Sept/2008 |
| 产品目录绘图： | 3 Pin Circuit |
| 标准包装： | 1 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 800mV @ 100mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 5ns |
| 电流 - 在 Vr 时反向漏电： | 2µA @ 25V |
| 电容@ Vr, F： | 10pF @ 1V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1598 (CN2011-ZH PDF) |
| 其它名称： | BAT54-FDIDKR |
BAT54 /A /C /S
Document number: DS11005 Rev. 30 - 2
2 of 4
www.diodes.com
April 2013
? Diodes Incorporated
BAT54 /A /C /S
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 V
Forward Continuous Current (Note 5)
IF
200 mA
Repetitive Peak Forward Current
IFRM
300 mA
Forward Surge Current @ t < 1.0s
IFSM
600 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
PD
200 mW
Typical Thermal Resistance Junction to Ambient Air (Note 5)
RθJA
500 °C/W
Typical Thermal Resistance Junction to Case (Note 8)
RθJC
180 °C/W
Operating and Storage Temperature Range (Note 6)
TJ, TSTG
-65 to +150 °C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7)
V(BR)R
30
?? ??
V
IRS
= 100μA
Forward Voltage
VF
?? ??
240
320
400
500
800
mV
IF
= 0.1mA
IF
= 1mA
IF
= 10mA
IF
= 30mA
IF
= 100mA
Reverse Leakage Current (Note 7)
IR
?? ??
2.0 μA VR
= 25V
Total Capacitance
CT
?? ??
10 pF VR
= 1.0V, f = 1.0MHz
Reverse Recovery Time
trr
?? ??
5.0 ns IF
= 10mA through I
R
= 10mA to
IR
= 1.0mA, R
L
= 100
?
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ
< 1/R
θJA
7. Short duration test pulse used to minimize self-heating effect.
8. Device mounted on Polymide substr
ate PC board. FR4 2oz 1*MRP layout.
0.1
0.01
1
0.001
0.00010
1.0
0.4
0.6
0.8
0.2
I , INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Figure 1 Typical Forward Characteristics
T = -40oCA
T = 125oCA
T = 75oCA
T = 25oCA
T = 0oCA
0.001
0.01
0.1
10
1
100
0
510152025
30
V , INSTANTANEOUS REVERSE VOLTAGE (V)R
Figure 2 Typical Reverse Characteristics
T = 25oCA
T = 75oCA
T = 125oCA
T = 0oCA
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