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参数资料
| 型号： | BAT54/E9 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 0.2 A, 30 V, SILICON, SIGNAL DIODE, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 120K |
| 代理商： | BAT54/E9 |
www.vishay.com
2
Document Number 85508
Rev. 2, 10-Jul-03
VISHAY
BAT54 to BAT54S
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Layout for RθJA test
Thickness:
- Fiberglass 0.059 in. (1.5 mm)
- Copper leads 0.012 in. (0.3 mm)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Reverse Breakdown voltage
IR = 100 A pulses
V(BR)
30
V
Leakage current
Pulse test tp < 300 s, θ < 2 % at
VR = 25 V
IR
2
A
Forward voltage
IF = 0.1 mA, tp < 300 s, θ < 2 %
VF
240
mV
IF = 1 mA, tp < 300 s, θ < 2 %
VF
320
mV
IF = 10 mA, tp < 300 s, θ < 2 %
VF
400
mV
IF = 30 mA, tp < 300 s, θ < 2 %
VF
500
mV
IF = 100 mA, tp < 300 s, θ < 2 %
VF
1000
mV
Capacitance
VR = 1 V, f = 1 MHz
Ctot
10
pF
Reverse recovery time
IF = 10 mA through IR = 10 mA
to Irr = 1mA, RL = 100
trr
5
ns
0.59 (15)
0.2 (5)
0.03 (0.8)
0.30 (7.5)
0.12 (3)
.04 (1)
0.06 (1.5)
0.20 (5.1)
.08 (2)
.04 (1)
0.47 (12)
Dimensions in inches (millimeters)
17451
Figure 1. Typical Forward Voltage Forward Current at Various
Temperatures
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
1000
100
10
1
0.1
VF in V
IF
in
mA
TJ = -40°
ˇ
C
TJ =25ˇ°C
TJ = 125°
ˇ
C
18025
Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage VR
0
4
812
10
12
14
8
6
4
2
VR in V
C
in
pF
16
20
24
28
18026
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