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| 型号： | BAT54HT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 127K |
| 描述： | DIODE SCHOTTKY DET/SW 30V SOD323 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 800mV @ 100mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 5ns |
| 电流 - 在 Vr 时反向漏电： | 2µA @ 25V |
| 电容@ Vr, F： | 10pF @ 1V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 剪切带 (CT) |
| 其它名称： | BAT54HT1OSCT |
               ? Semiconductor Components Industries, LLC, 2011 November, 2011 ? Rev. 6 1 Publication Order Number: BAT54HT1/D BAT54HT1G, NSVBAT54HT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features ? Extremely Fast Switching Speed ? Low Forward Voltage ? 0.35 V (Typ) @ I F = 10 mAdc ? Device Marking: JV ? AEC Qualified and PPAP Capable ? NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 125 ?C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board, (Note 1) TA = 25 ?C Derate above 25?C PD 200 1.57 mW mW/?C Forward Current (DC) IF 200 Max mA Non?Repetitive Peak Forward Current, tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA Thermal Resistance Junction?to?Ambient RJA 635 ?C/W Junction and Storage Temperature Range TJ, Tstg ?55 to150 ?C 1. FR?4 Minimum Pad *For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 30 VOLT SILICON HOT?CARRIER DETECTOR AND SWITCHING DIODES Device Package Shipping? ORDERING INFORMATION SOD?323 CASE 477 STYLE 1 1 CATHODE 2 ANODE MARKING DIAGRAM http://onsemi.com BAT54HT1G SOD?323 (Pb?Free) 3,000 / Tape & Reel ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. JVM 2 1 JV = Device Code M = Date Code = Pb?Free Package (Note: Microdot may be in either location) NSVBAT54HT1G SOD?323 (Pb?Free) 3,000 / Tape & Reel |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BAT54HT1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Schottky Barrier Diodes |
| BAT54HT1G | 功能描述:整流器 30V/0.2A SCHOTTKY DIODE RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| BAT54HT1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| BAT54HT1G_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Small Signal Diode |
| BAT54HT1GH | 制造商:ZOWIE 制造商全称:Zowie Technology Corporation 功能描述:Schottky Barrier Diode Lead free product Halogen-free type |
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