参数资料
型号: BAV199-7-F
厂商: Diodes Inc
文件页数: 2/4页
文件大小: 80K
描述: DIODE SWITCH DUAL 85V SOT23-3
产品变化通告: Encapsulate Change 15/May/2008
其它图纸: SOT-23 Top
标准包装: 1
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 50mA
电流 - 在 Vr 时反向漏电: 5nA @ 75V
电流 - 平均整流 (Io)(每个二极管): 140mA(DC)
电压 - (Vr)(最大): 85V
反向恢复时间(trr): 3µs
二极管类型: 标准
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 1 对串联
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3
包装: 标准包装
产品目录页面: 1596 (CN2011-ZH PDF)
BAV199
Document number: DS30232 Rev. 9 - 2
2 of 4
www.diodes.com
January 2012
? Diodes Incorporated
BAV199
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
85 V
RMS Reverse Voltage
VR(RMS)
60 V
Forward Continuous Current (Note 4) Single diode
Double diode
IFM
160
140
mA
Repetitive Peak Forward Current (Note 4)
IFRM
500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0ms
@ t = 1.0s
IFSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
PD
250 mW
Thermal Resistance Junction to Ambient Air (Note 4)
RθJA
500
°C/W
Operating and Storage Temperature Range
TJ , TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
V(BR)R
85
?
?
V
IR
= 100
μA
Forward Voltage
VF
?
?
0.90
1.0
1.1
1.25
V
IF
= 1.0mA
IF
= 10mA
IF
= 50mA
IF
= 150mA
Leakage Current (Note 5)
IR
?
?
5.0
80
nA
nA
VR
= 75V
VR
= 75V, T
J
= 150
°C
Total Capacitance
CT
?
2
?
pF
VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
?
3.0
μs
IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0
50
100
0 255075100125150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)A
Fig. 1 Power Derating Curve, Total Package
150
200
250
300
Note 4
0.1
1
10
100
1,000
0
0.40.2
0.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Fig. 2 Typical Forward Characteristics
0.8 1.21.0
1.4
I, INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(mA)
F
T = 150oCA
T = 25oCA
T = 125oCA
T = - oCA
55
T = 5oCA
8
相关PDF资料
PDF描述
3386X-1-101 TRIMMER 100 OHM 0.5W TH
3386X-1-500 TRIMMER 50 OHM 0.5W TH
3386W-1-205 TRIMMER 2M OHM 0.5W TH
3386W-1-105 TRIMMER 1M OHM 0.5W TH
INTEGRATION KIT PASSIVE INTEGRATION KIT BCAP0650-3000
相关代理商/技术参数
参数描述
BAV199-AU 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
BAV199B6327XT 制造商:Infineon Technologies AG 功能描述:Diode Switching 85V 0.2A 3-Pin SOT-23 T/R
BAV199DW 制造商:JIANGSU 制造商全称:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:Multi-Chip DIODES
BAV199DW_09 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:QUAD SURFACE MOUNT LOW LEAKAGE DIODE
BAV199DW_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:QUAD SURFACE MOUNT LOW LEAKAGE DIODE