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参数资料
| 型号： | BAV19WS/D6 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 0.2 A, 120 V, SILICON, SIGNAL DIODE |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 112K |
| 代理商： | BAV19WS/D6 |
BAV19WS thru BAV21WS
Vishay Semiconductors
formerly General Semiconductor
Document Number 88151
14-May-02
www.vishay.com
1
New Product
Small-Signal Diodes
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Continuous Reverse Voltage
BAV19WS
BAV20WS
BAV21WS
Repetitive Peak Reverse Voltage
BAV19WS
BAV20WS
BAV21WS
Forward DC Current at T
amb
= 25
°
C
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25
°
C and f
≥
50Hz
Repetitive Peak Forward Current
at f
≥
50Hz,
θ
= 180
°
, T
amb
= 25
°
C
Surge Forward Current at t < 1s, T
j
= 25
°
C
Power Dissipation at T
amb
= 25
°
C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Symbol
Value
100
150
200
120
200
250
250
(1)
Unit
V
R
V
V
RRM
V
I
F
mA
I
F(AV)
200
(1)
mA
I
FRM
625
(1)
mA
I
FSM
P
tot
R
θ
JA
T
j
T
S
1
A
200
(1)
650
(1)
150
(1)
mW
°
C/W
°
C
°
C
–
65 to +175
(1)
Note:
(1) Valid provided that leads are kept at ambient temperature.
m
.010 (0.25)
min.
.012 (0.3)
Cathode Band
.
.
.059 (1.5)
m
m
Top View
.
.
.043 (1.1)
Features
Silicon Epitaxial Planar Diodes
For general purpose
These diodes are also available in other case
styles including: the DO-35 case with the type
designation BAV19 - BAV21, the MiniMELF
case with the type designation BAV100 - BAV103,
the SOT-23 case with the type designation
BAS19 - BAS21 and the SOD-123 case with the
type designation BAV19W - BAV21W
SOD-323
Mechanical Data
Case:
SOD-323 Plastic Case
Weight:
approx. 0.004g
Marking
BAV19WS = A8
Code:
BAV20WS = A9
BAV21WS = AA
Packaging Codes/Options:
D5/10K per 13
”
reel (8mm tape), 30K/box
D6/3K per 7
”
reel (8mm tape), 30K/box
0.055
(1.40)
0.062
(1.60)
0
Mounting Pad Layout
相关PDF资料 |
PDF描述 |
|---|---|
| BAV20WS/D5 | 0.2 A, 200 V, SILICON, SIGNAL DIODE |
| BAV21WS/D5 | 0.2 A, 250 V, SILICON, SIGNAL DIODE |
| BAV20/F2 | 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-204AH |
| BB804-0-GS18 | 42.75 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE |
| BBY53-03L | 5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BAV19WS-E3-08 | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Siliconix 功能描述:BAV19WS-E3-08 - Bulk 制造商:Vishay Siliconix 功能描述:BAV19WS-E3-08 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:BAV19WS Series SOD-323 120V 625mA Switching Diode 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOD323 |
| BAV19WS-E3-18 | 制造商:Vishay Siliconix 功能描述:BAV19WS-E3-18 - Bulk 制造商:Vishay Siliconix 功能描述:BAV19WS-E3-18 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOD323 |
| BAV19WS-G RRG | 功能描述:DIODE GEN PURP 100V 200MA SOD323 制造商:taiwan semiconductor corporation 系列:- 包装:带卷（TR） 零件状态:在售 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:100V 电流 - 平均整流（Io）:200mA 不同 If 时的电压 - 正向（Vf:1.25V @ 100mA 速度:小信号 =< 200mA（Io），任意速度 反向恢复时间（trr）:50ns 不同?Vr 时的电流 - 反向漏电流:100nA @ 100V 不同?Vr，F 时的电容:5pF @ 0V，1MHz 安装类型:表面贴装 封装/外壳:SC-76，SOD-323 供应商器件封装:SOD-323 工作温度 - 结:-65°C ~ 150°C 标准包装:3,000 |
| BAV19WS-G3-08 | 制造商:Vishay Siliconix 功能描述:BAV19WS-G3-08 - Cut TR (SOS) 制造商:Vishay Siliconix 功能描述:BAV19WS-G3-08 - Bulk 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOD323 |
| BAV19WS-G3-18 | 制造商:Vishay Siliconix 功能描述:BAV19WS-G3-18 - Bulk 制造商:Vishay Siliconix 功能描述:BAV19WS-G3-18 - Cut TR (SOS) |
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