参数资料
型号: BAW56T-7-F
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 79K
描述: DIODE SWITCH 85V 150MW SOT523
产品变化通告: Wire Change 16/Sept/2008
产品目录绘图: SOT-523 Top
标准包装: 1
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 50mA
电流 - 在 Vr 时反向漏电: 2µA @ 75V
电流 - 平均整流 (Io)(每个二极管): 75mA(DC)
电压 - (Vr)(最大): 85V
反向恢复时间(trr): 4ns
二极管类型: 标准
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 1 对共阳极
安装类型: 表面贴装
封装/外壳: SOT-523
供应商设备封装: SOT-523
包装: 标准包装
产品目录页面: 1596 (CN2011-ZH PDF)
其它名称: BAW56T-FDIDKR
BAS16T, BAW56T,
BAV70T, BAV99T
Document number: DS30260 Rev. 10 - 2
1 of 3
www.diodes.com
March 2009
? Diodes Incorporated
BAS16T, BAW56T,
BAV70T
,
BAV99T
SURFACE MOUNT FAST
SWITCHING DIODE
Features
?
Ultra-Small Surface Mount Package
?
Fast Switching Speed
?
For General Purpose Switching Applications
?
High Conductance
?
Lead Free/RoHS Compliant (Note 1)
?
"Green" Device (Note 3 and 4)
Mechanical Data
?
Case: SOT-523
?
Case Material - Molded Plasti
c. UL Flammability Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020D
?
Terminals: Solderable per MIL-STD-202, Method 208
?
Lead Free Plating (Matte Tin Finish)
?
Polarity: See Diagrams Below
?
Marking Information: See Diagrams Below & Page 2
?
Ordering Information: See Page 2
?
Weight: 0.002 grams (approximate)
TOP VIEW
BAS16T Marking: A2
BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
85
V
RMS Reverse Voltage
VR(RMS)
60
V
Forward Continuous Current (Note 2) Single Diode
Double Diode
IFM
155
75
mA
Repetitive Peak Forward Current
IFRM
500
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0ms
@ t = 1.0s
IFSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 2)
PD
150
mW
Thermal Resistance Junction to Ambient (Note 2)
RθJA
833
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 5)
V(BR)R
85
?
?
V
IR
= 100
μA
Forward Voltage
VF
?
?
0.715
0.855
1.0
1.25
V
IF
= 1.0mA
IF
= 10mA
IF
= 50mA
IF
= 150mA
Leakage Current (Note 5)
IR
?
?
2.0
100
60
30
μA
μA
μA
nA
VR
= 75V
VR
= 75V, T
J
= 150
°C
VR
= 25V, T
J
= 150
°C
VR
= 25V
Total Capacitance
CT
?
1.5
?
pF
VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
?
4.0
ns
IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 1. No purposefully added lead.
2. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007)
and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
2O3
Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
SOT-523
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