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参数资料
| 型号： | BC489ARLRA |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-04, TO-226AA, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 190K |
| 代理商： | BC489ARLRA |
High Current Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
80
Vdc
Collector–Base Voltage
VCBO
80
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
0.5
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watt
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
80
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
80
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
—
100
nAdc
ON CHARACTERISTICS*
DC Current Gain
(IC = 10 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
BC489
BC489A
BC489B
(IC = 1.0 Adc, VCE = 5.0 Vdc)*
hFE
40
60
100
160
15
—
160
260
—
400
250
400
—
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle 2%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
227
Publication Order Number:
BC489/D
BC489, A, B
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
COLLECTOR
1
2
BASE
3
EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BC489AZL1 | 功能描述:两极晶体管 - BJT 1A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BC489AZL1G | 功能描述:两极晶体管 - BJT 1A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BC489B | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Current Transistors(NPN Silicon) |
| BC489BRL1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| BC489BZL1 | 功能描述:两极晶体管 - BJT 1A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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