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参数资料
| 型号： | BC857AW-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 76K |
| 代理商： | BC857AW-13 |
DS30251 Rev. 5 - 2
2 of 3
BC856AW - BC858CW
www.diodes.com
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 4)
BC856
BC857
BC858
V(BR)CBO
-80
-50
-30
—
V
IC = 10
mA, IB = 0
Collector-Emitter Breakdown Voltage (Note 4)
BC856
BC857
BC858
V(BR)CEO
-65
-45
-30
—
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 4)
V(BR)EBO
-5
—
V
IE = 1
mA, IC = 0
DC Current Gain (Note 4)
Current Gain Group A
B
C
hFE
125
220
420
180
290
520
250
475
800
—
VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage (Note 4)
VCE(SAT)
—
-75
-250
-300
-650
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage (Note 4)
VBE(SAT)
—
-700
-850
—
-950
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage (Note 4)
VBE(ON)
-600
—
-650
—
-750
-820
mV
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
Collector-Cutoff Current (Note 4)
ICBO
—
-15
-4.0
nA
A
VCB = -30V
VCB = -30V, TA = 150°C
Gain Bandwidth Product
fT
100
200
—
MHz
VCE = -5.0V, IC = -10mA,
f = 100MHz
Collector-Base Capacitance
CCBO
—
3
4.5
pF
VCB = -10V, f = 1.0MHz
Noise Figure
NF
—
10
dB
VCE = -5.0V, IC = 200A,
RS = 2k
W, f = 1kHz,
Df = 200Hz
Notes:
4. Short duration pulse test to minimize self-heating effect.
@ TA =25°C unless otherwise specified
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
YM
Marking Information
Notes:
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*xx = device type, e.g. BC856AW-7.
6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BC856AW-7-F.
Device
Packaging
Shipping
BC85xxW-7*
SOT-323
3000/Tape & Reel
Ordering Information (Note 5)
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BC857AW-7 | 功能描述:两极晶体管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BC857AW-7-F | 功能描述:两极晶体管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BC857AW-G | 功能描述:两极晶体管 - BJT -50V, .1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BC857AWL6327XT | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 45V 0.1A 3-Pin SOT-323 T/R |
| BC857AWT1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:CASE 419-02, STYLE 3 SOT-323/SC-70 |
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