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参数资料
| 型号： | BCY59C |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Bipolar NPN Device in A Hermetically sealed TO18 Metal Package |
| 中文描述： | 200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 封装： | TO-18, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 30K |
| 代理商： | BCY59C |
Underside View
Pin 1 – Emitter
PAD 2 – Base
PAD 3 – Collector
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
JAN LEVEL SCREENING OPTIONS
APPLICATIONS:
Intended for use in audio input stages, driver
stages and low noise input applications. The
TO-18 (TO-206AA)
MECHANICAL DATA
Dimensions in mm (inches)
BCY59
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5253
Issue 1
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO
Collector - Emitter Voltage (IB =0)
45V
VBEO
Emitter - Base Voltage (IC =0)
7V
IC
Collector Current
200mA
PTOT
Total Power Dissipation @ Tamb ≤ 25°C
390mW
@ Tc ≤ 45°C
1W
TJ, TSTG
Maximum Junction And Storage Temperature
-55°C to 175°C
RθJC
Thermal Resistance Junction to Case
150°C/W
RθJA
Thermal Resistance Junction to Ambient
385°C/W
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33
(0
.2
10)
4.
32
(0
.1
70)
12
.7
(
0
.500
)
mi
n.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both
accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
GENERAL PURPOSE,
SMALL SIGNAL, NPN TRANSISTOR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BCY59CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed LCC1 |
| BCY59DCSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Dual Bipolar NPN Devices in a hermetically sealed |
| BCY59DD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | CHIP |
| BCY59IX | 功能描述:两极晶体管 - BJT NPN Low Noise Audio RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BCY59-IX | 功能描述:THROUGH-HOLE TRANSISTOR-SMALL SI 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:在售 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:100mA 电压 - 集射极击穿（最大值）:45V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:700mV @ 2.5mA，100mA 电流 - 集电极截止（最大值）:10nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:630 @ 10mA，1V 功率 - 最大值:1W 频率 - 跃迁:150MHz 工作温度:-65°C ~ 200°C（TJ） 安装类型:通孔 封装/外壳:TO-206AA，TO-18-3 金属罐 供应商器件封装:TO-18 标准包装:2,000 |
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