- 您现在的位置：买卖IC网 > PDF目录295139 > BD00GA5WEFJ-E2 ADJUSTABLE POSITIVE LDO REGULATOR, PDSO8 PDF资料下载
参数资料
| 型号： | BD00GA5WEFJ-E2 |
| 元件分类： | 可调正电压单路输出LDO稳压器 |
| 英文描述： | ADJUSTABLE POSITIVE LDO REGULATOR, PDSO8 |
| 封装： | ROHS COMPLIANT, HTSOP-8 |
| 文件页数： | 2/12页 |
| 文件大小： | 416K |
| 代理商： | BD00GA5WEFJ-E2 |
www.rohm.com
2010.10 - Rev.A
2010 ROHM Co., Ltd. All rights reserved.
Technical Note
10/11
BD00IA5WEFJ
(11) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
A lways discharge capacitors after each process or step. Always turn the IC’s power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting or storing the IC.
(12) Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
(13) Ground Wiring Pattern.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the
GND wiring pattern of any external components, either.
Resistor
Transistor (NPN)
N
N P+
P
+
P
P substrate
GND
Parasitic element
Pin A
N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin B
C
B
E
N
GND
Pin A
Parasitic
element
Pin B
Other adjacent elements
E
B
C
GND
Parasitic
element
相关PDF资料 |
PDF描述 |
|---|---|
| BD00GA5WEFJ | ADJUSTABLE POSITIVE LDO REGULATOR, PDSO8 |
| BD00GC0WEFJ-E2 | ADJUSTABLE POSITIVE LDO REGULATOR, PDSO8 |
| BD00GC0WEFJ | ADJUSTABLE POSITIVE LDO REGULATOR, PDSO8 |
| BD00HA5EFJ-E2 | ADJUSTABLE POSITIVE LDO REGULATOR, PDSO8 |
| BD00HA5WEFJ-E2 | ADJUSTABLE POSITIVE LDO REGULATOR, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BD00GC0EFJ-E2 | 制造商:ROHM 制造商全称:Rohm 功能描述:500mA Secondary Variable Output LDO Regulators for Local Power Supplies |
| BD00GC0MEFJ-E2 | 制造商:ROHM 制造商全称:Rohm 功能描述:Automotive 1.0A Variable Output LDO Regulator |
| BD00GC0MEFJ-LBH2 | 功能描述:1.0A VARIABLE OUTPUT INDUSTRIAL 制造商:rohm semiconductor 系列:- 包装:剪切带（CT） 零件状态:在售 输出配置:正 输出类型:可调式 稳压器数:1 电压 - 输入（最大值）:14V 电压 - 输出（最小值/固定）:1.5V 电压 - 输出（最大值）:13V 压降（最大值）:1.2V @ 1A 电流 - 输出:1A 电流 - 电源（最大值）:1.2mA PSRR:- 控制特性:使能 保护功能:过流，超温，软启动 工作温度:-40°C ~ 105°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽）裸露焊盘 供应商器件封装:8-HTSOP-J 标准包装:1 |
| BD00GC0MEFJ-M | 制造商:ROHM 制造商全称:Rohm 功能描述:Automotive 1.0A Variable Output LDO Regulator |
| BD00GC0MEFJ-ME2 | 制造商:ROHM 制造商全称:Rohm 功能描述:Automotive 1.0A Variable Output LDO Regulator |
发布紧急采购，3分钟左右您将得到回复。