参数资料
| 型号： | BD3572FP-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 7/12页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ .5A TO252-5 |
| 标准包装： | 2,000 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 2.8 V ~ 12 V |
| 输入电压： | 4.5 V ~ 36 V |
| 电压 - 压降（标准）： | 0.25V @ 200mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 500mA（最小值） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-5，DPak（4 引线 + 接片），TO-252AD |
| 供应商设备封装： | TO-252-5 |
| 包装： | 带卷 (TR) |
BD3570FP/HFP, BD3571FP/HFP, BD3572FP/HFP, BD3573FP/HFP
BD3574FP/HFP, BD3575FP/HFP
Technical Note
The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of
the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC
malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will
trigger the operation of parasitic elements, such as by the application of voltages lower than the GND (P substrate) voltage
to input pins.
Resistor
Transistor (NPN)
B
(Pin B)
(Pin A)
(Pin B)
C
E
B
C
E
N
P+
N
P
P+
N
N
P+
N
P
P+
N
GND
Parasitic element or
transistor
P
Parasitic element
P
substr
(Pin A)
GND
Parasitic element
t GND
Parasitic elements
or transistor
Fig. 26 Example of a Simple Monolithic IC Architecture
8) Ground wiring patterns
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the application's reference point so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change
the GND wiring pattern of any external parts, either.
9) SW Pin
Do not apply the voltage to SW pin when the V CC is not applied.
And when the V CC is applied, the voltage of SW pin must not exceed V CC .
10) Thermal shutdown circuit (TSD)
This IC incorporates a built-in thermal shutdown circuit for the protection from thermal destruction. The IC should be used
within the specified power dissipation range. However, in the event that the IC continues to be operated in excess of its
power dissipation limits, the attendant rise in the chip's temperature T j will trigger the thermal shutdown circuit to turn off
all output power elements. The circuit automatically resets once the chip's temperature T j drops.
The thermal shutdown circuit operates if the IC is under conditions in express of the absolute maximum ratings. Never
design sets on the premise of using the thermal shutdown circuit. (See Fig. 8)
11) Overcurrent protection circuit (OCP)
The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This
circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current
flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous operation or transitioning of the
protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to
temperatures. (See Fig. 3)
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
7/9
2011.03 - Rev.B
相关PDF资料 |
PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BD3572HFP | 制造商:ROHM 制造商全称:Rohm 功能描述:High Voltage LDO Regulators |
| BD3572HFP-TR | 功能描述:低压差稳压器 - LDO LDO REG 2.8V-12V 0.5A 6PIN RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| BD3572YFP-ME2 | 功能描述:HIGH VOLTAGE LDO REGULATORS 制造商:rohm semiconductor 系列:- 包装:剪切带（CT） 零件状态:在售 输出配置:正 输出类型:可调式 稳压器数:1 电压 - 输入（最大值）:36V 电压 - 输出（最小值/固定）:2.8V 电压 - 输出（最大值）:12V 压降（最大值）:0.48V @ 200mA 电流 - 输出:500mA 电流 - 静态（Iq):50μA PSRR:55dB（120Hz） 控制特性:- 保护功能:过流，超温，短路 工作温度:-40°C ~ 125°C（TA） 安装类型:表面贴装 封装/外壳:TO-252-5，DPak（4 引线 + 接片），TO-252AD 供应商器件封装:TO-252-5 标准包装:1 |
| BD3572YHFP-MTR | 功能描述:HIGH VOLTAGE LDO REGULATORS 制造商:rohm semiconductor 系列:- 包装:剪切带（CT） 零件状态:在售 输出配置:正 输出类型:可调式 稳压器数:1 电压 - 输入（最大值）:36V 电压 - 输出（最小值/固定）:2.8V 电压 - 输出（最大值）:12V 压降（最大值）:0.48V @ 200mA 电流 - 输出:500mA 电流 - 静态（Iq):50μA PSRR:55dB（120Hz） 控制特性:- 保护功能:过流，超温，短路 工作温度:-40°C ~ 125°C（TA） 安装类型:表面贴装 封装/外壳:TO-263-6，D2Pak（5 引线 + 接片），TO-263BA 供应商器件封装:HRP-5 标准包装:1 |
| BD3573FP | 制造商:ROHM 制造商全称:Rohm 功能描述:High Voltage LDO Regulators |
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